English
Language : 

GTT8209E Datasheet, PDF (2/4 Pages) GTM CORPORATION – N-CHANNEL ENHANCEMENT MODE POWER MOSFET
◁
ISSUED DATE :2006/08/08
REVISED DATE :
Electrical Characteristics (Tj = 25к unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Drain-Source Breakdown Voltage
BVDSS
20
-
-
V VGS=0, ID=250uA
Gate Threshold Voltage
VGS(th) 0.5
-
1.0
V VDS=VGS, ID=250uA
Forward Transconductance
gfs
-
24
-
S VDS=5V, ID=7A
Gate-Source Leakage Current
IGSS
-
-
±10 uA VGS= ±10V
Drain-Source Leakage Current(Tj=25к)
-
-
1
uA VDS=16V, VGS=0
IDSS
Drain-Source Leakage Current(Tj=55к)
-
-
5
uA VDS=16V, VGS=0
-
-
21
VGS=10V, ID=7.0A
-
Static Drain-Source On-Resistance RDS(ON)
-
-
24
VGS=4.5V, ID=6.6A
m
-
32
VGS=2.5V, ID=5.5A
Total Gate Charge2
Gate-Source Charge
Gate-Drain (“Miller”) Change
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Qg
Qgs
Qgd
Td(on)
Tr
Td(off)
Tf
Ciss
Coss
Crss
-
-
50
VGS=1.8V, ID=2.0A
-
9.3
-
ID=7A
-
0.6
-
nC VDS=10V
-
3.6
-
VGS=4.5V
-
5.7
-
-
11.5
-
- 31.5 -
-
9.7
-
VDS=10V
ns VGS=5V
RG=3
RL=1.4
-
630
-
164
-
-
137
-
VGS=0V
pF VDS=10V
f=1.0MHz
Gate Resistance
Source-Drain Diode
Rg
-
1.5
-
f=1.0MHz
Parameter
Forward On Voltage2
Reverse Recovery Time2
Reverse Recovery Charge
Symbol
VSD
Trr
Qrr
Min.
-
-
-
Typ.
-
15.2
6.3
Max.
1.0
-
-
Unit
Test Conditions
V IS=1.0A, VGS=0V
ns IS=7A, VGS=0V
nC dI/dt=100A/ s
Continuous Source Current (Body Diode)
IS
-
-
2.5
A VD=VG=0V, VS=1.0V
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse widthЉ300us, duty cycleЉ2%.
3. Surface mounted on 1 in2 copper pad of FR4 board tЉ5sec; 180к/W when mounted on Min. copper pad.
GTT8209E
Page: 2/4
 ▷