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| GTT3455 Datasheet, PDF (2/4 Pages) GTM CORPORATION – P-CHANNEL ENHANCEMENT MODE POWER MOSFET | |||
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ISSUED DATE :2005/07/14
REVISED DATE :
Electrical Characteristics(Tj = 25Ä Unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Drain-Source Breakdown Voltage
BVDSS -30
-
-
Breakdown Voltage Temperature Coefficient ϦBVDSS /ϦTj
-
-0.02
-
V VGS=0, ID=-250uA
V/к Reference to 25к, ID=-1mA
Gate Threshold Voltage
VGS(th) -1.0
-
-3.0
V VDS=VGS, ID=-250uA
Forward Transconductance
gfs
-
6
-
S VDS=-5V, ID=-4.0A
Gate-Source Leakage Current
IGSS
-
-
Í100 nA VGS= Í20V
Drain-Source Leakage Current(Tj=25к)
-
-
-1
uA VDS=-30V, VGS=0
IDSS
Drain-Source Leakage Current(Tj=55к)
-
-
-25
uA VDS=-24V, VGS=0
-
Static Drain-Source On-Resistance2 RDS(ON)
-
Total Gate Charge2
Qg
-
Gate-Source Charge
Qgs
-
Gate-Drain (âMillerâ) Change
Turn-on Delay Time2
Qgd
-
Td(on)
-
Rise Time
Tr
-
Turn-off Delay Time
Td(off)
-
Fall Time
Tf
-
Input Capacitance
Ciss
-
Output Capacitance
Coss
-
Reverse Transfer Capacitance
Crss
-
-
100
VGS=-10V, ID=-3.5A
mÓ¨
-
170
VGS=-4.5V, ID=-2.7A
5.5 8.8
ID=-4.0A
1
-
nC VDS=-24V
2.6
-
VGS=-4.5V
7
-
VDS=-15V
6
-
ID=-1A
ns VGS=-10V
18
-
RG=3.3Ó¨
4
-
RD=15Ó¨
400 640
90
-
30
-
VGS=0V
pF VDS=-25V
f=1.0MHz
Source-Drain Diode
Parameter
Forward On Voltage2
Reverse Recovery Time2
Reverse Recovery Charge
Symbol
VSD
Trr
Qrr
Min.
-
-
-
Typ.
-
21
14
Max.
-1.2
-
-
Unit
Test Conditions
V IS=-1.6A, VGS=0V
ns IS=-4.0A, VGS=0V
nC dI/dt=100A/ s
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse widthÐ300us, duty cycleÐ2%.
3. Surface mounted on 1 in2 copper pad of FR4 board; 156к/W when mounted on Min. copper pad.
2/4
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