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GTT2623 Datasheet, PDF (2/4 Pages) GTM CORPORATION – P-CHANNEL ENHANCEMENT MODE POWER MOSFET
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ISSUED DATE :2006/03/28
REVISED DATE :
Electrical Characteristics (Tj = 25к unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Drain-Source Breakdown Voltage
BVDSS -30
-
-
Breakdown Voltage Temperature Coefficient ϦBVDSS /ϦTj
-
-0.02
-
V VGS=0, ID=-250uA
V/к Reference to 25к, ID=-1mA
Gate Threshold Voltage
Forward Transconductance
VGS(th) -1.0
-
-3.0
V VDS=VGS, ID=-250uA
gfs
-
2
-
S VDS=-5V, ID=-2.0A
Gate-Source Leakage Current
IGSS
-
- ±100 nA VGS= ±20V
Drain-Source Leakage Current(Tj=25к)
-
-
-1
uA VDS=-30V, VGS=0
IDSS
Drain-Source Leakage Current(Tj=70к)
-
-
-25
uA VDS=-24V, VGS=0
-
Static Drain-Source On-Resistance2 RDS(ON)
-
Total Gate Charge2
Qg
-
Gate-Source Charge
Qgs
-
Gate-Drain (“Miller”) Change
Turn-on Delay Time2
Qgd
-
Td(on)
-
Rise Time
Tr
-
Turn-off Delay Time
Td(off)
-
Fall Time
Tf
-
Input Capacitance
Ciss
-
Output Capacitance
Coss
-
Reverse Transfer Capacitance
Crss
-
-
170
VGS=-10V, ID=-2.0A
m
-
280
VGS=-4.5V, ID=-1.6A
2.8 4.5
ID=-2.0A
0.5
-
nC VDS=-24V
1.4
-
VGS=-4.5V
5
-
VDS=-15V
6
-
ID=-1.0A
ns VGS=-10V
15
-
RG=3.3
3
-
RD=15
150 240
42
-
32
-
VGS=0V
pF VDS=-25V
f=1.0MHz
Source-Drain Diode
Parameter
Forward On Voltage2
Reverse Recovery Time2
Reverse Recovery Charge
Symbol
VSD
Trr
Qrr
Min.
-
-
-
Typ.
-
20
13
Max.
-1.2
-
-
Unit
Test Conditions
V IS=-1.0A, VGS=0V
ns IS=-2.0A, VGS=0V
nC dI/dt=100A/ s
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse widthЉ300us, duty cycleЉ2%.
3. Surface mounted on 1 in2 copper pad of FR4 board, tЉ5sec; 180к/W when mounted on Min. copper pad.
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