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| GTS9928E Datasheet, PDF (2/6 Pages) GTM CORPORATION – N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |||
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ISSUED DATE :2004/10/13
REVISED DATE :2005/08/10B
Electrical Characteristics(Tj = 25Ä Unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Drain-Source Breakdown Voltage
BVDSS
20
-
-
V VGS=0, ID=250uA
Breakdown Voltage Temperature Coefficient ϦBVDSS /ϦTj
-
0.02
-
V/к Reference to 25к, ID=1mA
Gate Threshold Voltage
VGS(th) 0.5
-
-
V VDS=VGS, ID=250uA
Forward Transconductance
gfs
-
21
-
S VDS=10V, ID=5A
Gate-Source Leakage Current
IGSS
-
-
Í10 uA VGS= Í12V
Drain-Source Leakage Current(Tj=25к)
-
-
1
uA VDS=20V, VGS=0
IDSS
Drain-Source Leakage Current(Tj=70к)
-
-
25
uA VDS=20V, VGS=0
-
Static Drain-Source On-Resistance2 RDS(ON)
-
-
22
mÓ¨ VGS=4.5V, ID=5A
-
28
VGS=2.5V, ID=2A,
Total Gate Charge2
Gate-Source Charge
Gate-Drain (âMillerâ) Change
Qg
- 15.9 -
ID=5A
Qgs
-
1.5
-
nC VDS=10V
Qgd
-
7.4
-
VGS=4.5V
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Td(on)
Tr
Td(off)
Tf
-
6.2
-
-
9
-
-
30
-
-
11
-
VDS=10V
ID=1A
ns VGS=4.5V
RG=3.3Ó¨
RD=10Ó¨
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
-
530
-
-
245
-
-
125
-
VGS=0V
pF VDS=20V
f=1.0MHz
Source-Drain Diode
Parameter
Symbol
Forward On Voltage2
VSD
Continuous Source Current(Body Diode) IS
Min.
-
-
Typ.
-
-
Max.
1.2
0.83
Unit
Test Conditions
V IS=5A, VGS=0, Tj=25к
A VD=VG=0V, VS=1.2V
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse widthÐ300us, duty cycleÐ2%.
3. Surface mounted on 1 in2 copper pad of FR4 board; 208к/W when mounted on Min. copper pad.
2/6
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