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GSS9962 Datasheet, PDF (2/4 Pages) GTM CORPORATION – N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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ISSUED DATE :2005/11/18
REVISED DATE :
Electrical Characteristics (Tj = 25к unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Drain-Source Breakdown Voltage
BVDSS
40
-
Breakdown Voltage Temperature Coefficient ϦBVDSS /ϦTj
-
0.1
-
V VGS=0, ID=250uA
-
V/к Reference to 25к, ID=1mA
Gate Threshold Voltage
Forward Transconductance
VGS(th) 1.0
-
3.0
gfs
-
11
-
V VDS=VGS, ID=250uA
S VDS=10V, ID=7A
Gate-Source Leakage Current
IGSS
-
- ±100 nA VGS= ±20V
Drain-Source Leakage Current(Tj=25к)
-
-
1
uA VDS=40V, VGS=0
IDSS
Drain-Source Leakage Current(Tj=70к)
-
-
25
uA VDS=32V, VGS=0
-
Static Drain-Source On-Resistance2 RDS(ON)
-
-
25
VGS=10V, ID=7A
m
-
40
VGS=4.5V, ID=5A
Total Gate Charge2
Gate-Source Charge
Gate-Drain (“Miller”) Change
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Qg
Qgs
Qgd
Td(on)
Tr
Td(off)
Tf
- 25.8 -
-
4.4
-
-
9.1
-
- 10.6 -
-
6.8
-
- 26.3 -
-
12
-
ID=7A
nC VDS=32V
VGS=10V
VDS=20V
ID=1A
ns VGS=10V
RG=5.7
RD=20
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
- 1165 -
-
205
-
-
142
-
VGS=0V
pF VDS=25V
f=1.0MHz
Source-Drain Diode
Parameter
Forward On Voltage2
Reverse Recovery Time2
Reverse Recovery Charge
Symbol
VSD
Trr
Qrr
Min.
-
-
-
Typ.
-
21.2
16
Max.
1.2
-
-
Unit
Test Conditions
V IS=1.7A, VGS=0V
ns IS=7A, VGS=0V
nC dI/dt=100A/ s
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse widthЉ300us, duty cycleЉ2%.
3. Surface mounted on 1 in2 copper pad of FR4 board; 135к/W when mounted on Min. copper pad.
GSS9962
Page: 2/4
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