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GSS4500 Datasheet, PDF (2/7 Pages) GTM CORPORATION – N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
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ISSUED DATE :2006/04/21
REVISED DATE :
N-Channel Electrical Characteristics (Tj = 25к unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Drain-Source Breakdown Voltage
BVDSS
20
-
-
Breakdown Voltage Temperature Coefficient ϦBVDSS /ϦTj
-
0.037
-
V VGS=0, ID=250uA
V/к Reference to 25к, ID=1mA
Gate Threshold Voltage
Forward Transconductance
VGS(th) 0.5
-
1.2
gfs
- 18.5 -
V VDS=VGS, ID=250uA
S VDS=10V, ID=6A
Gate-Source Leakage Current
IGSS
-
- ±100 nA VGS= ±12V
Drain-Source Leakage Current(Tj=25к)
-
-
1
uA VDS=20V, VGS=0
IDSS
Drain-Source Leakage Current(Tj=70к)
-
-
25
uA VDS=16V, VGS=0
-
Static Drain-Source On-Resistance2 RDS(ON)
Total Gate Charge2
Gate-Source Charge
Gate-Drain (“Miller”) Change
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Qg
-
Qgs
-
Qgd
-
Td(on)
-
Tr
-
Td(off)
-
Tf
-
-
30
VGS=4.5V, ID=6A
m
45
VGS=2.5V, ID=5.2A
9
15
ID=6A
1.8
-
nC VDS=10V
4.2
-
VGS=4.5V
29
-
VDS=10V
65
-
ID=1A
ns VGS=4.5
60
-
RG=6
50
-
RD=10
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
-
300 480
VGS=0V
-
255
-
pF VDS=8V
-
115
-
f=1.0MHz
Source-Drain Diode
Parameter
Forward On Voltage2
Reverse Recovery Time2
Reverse Recovery Charge
Symbol
VSD
Trr
Qrr
Min.
-
-
-
Typ.
-
26
17
Max.
1.2
-
-
Unit
Test Conditions
V IS=1.7A, VGS=0V
ns IS=6A, VGS=0V
nC dI/dt=100A/ s
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse widthЉ300us, duty cycleЉ2%.
3. Surface mounted on 1 in2 copper pad of FR4 board; 135к/W when mounted on Min. copper pad.
GSS4500
Page: 2/7
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