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| GP9962 Datasheet, PDF (2/4 Pages) GTM CORPORATION – N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |||
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ISSUED DATE :2005/08/08
REVISED DATE :
Electrical Characteristics(Tj = 25Ä Unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Drain-Source Breakdown Voltage
BVDSS
40
Breakdown Voltage Temperature Coefficient ϦBVDSS /ϦTj
-
Gate Threshold Voltage
VGS(th)
1.0
Forward Transconductance
gfs
-
Gate-Source Leakage Current
IGSS
-
Drain-Source Leakage Current(Tj=25к)
-
IDSS
Drain-Source Leakage Current(Tj=70к)
-
-
-
V VGS=0, ID=250uA
0.1
-
V/к Reference to 25к, ID=1mA
-
3.0
V VDS=VGS, ID=250uA
11
-
S VDS=10V, ID=7A
-
Í100 nA VGS= Í20V
-
1
uA VDS=40V, VGS=0
-
25
uA VDS=32V, VGS=0
Static Drain-Source On-Resistance2 RDS(ON)
-
-
Total Gate Charge2
Qg
-
Gate-Source Charge
Qgs
-
Gate-Drain (âMillerâ) Change
Qgd
-
-
28
mÓ¨ VGS=10V, ID=7A
-
40
VGS=4.5V, ID=5A
13
20
ID=7A
4
-
nC VDS=32V
7
-
VGS=4.5V
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Td(on)
-
10
-
VDS=20V
Tr
-
8
-
ID=1A
ns VGS=10V
Td(off)
-
26
-
RG=3.3Ó¨
Tf
-
9
-
RD=20Ó¨
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
- 1170 1870
VGS=0V
-
180
-
pF VDS=25V
-
116
-
f=1.0MHz
Source-Drain Diode
Parameter
Forward On Voltage2
Reverse Recovery Time2
Reverse Recovery Charge
Symbol
VSD
Trr
Qrr
Min.
-
-
-
Typ.
-
24
18
Max.
1.2
-
-
Unit
Test Conditions
V IS=1.7A, VGS=0V
ns IS=7A, VGS=0V
nC dI/dt=100A/ s
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse widthÐ300us, duty cycleÐ2%.
3. Mounted on 1 in2 copper pad of FR4 board; 90к/W when mounted on Min. copper pad.
2/4
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