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GP9960 Datasheet, PDF (2/4 Pages) GTM CORPORATION – N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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ISSUED DATE :2005/08/08
REVISED DATE :
Electrical Characteristics(Tj = 25ć Unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Drain-Source Breakdown Voltage
BVDSS
40
Breakdown Voltage Temperature Coefficient ϦBVDSS /ϦTj
-
Gate Threshold Voltage
VGS(th)
1.0
Forward Transconductance
gfs
-
Gate-Source Leakage Current
IGSS
-
Drain-Source Leakage Current(Tj=25к)
-
IDSS
Drain-Source Leakage Current(Tj=70к)
-
-
-
0.032 -
-
3.0
25
-
- ̈́100
-
1
-
25
V VGS=0, ID=250uA
V/к Reference to 25к, ID=1mA
V VDS=VGS, ID=250uA
S VDS=10V, ID=7A
nA VGS= ̈́20V
uA VDS=40V, VGS=0
uA VDS=32V, VGS=0
Static Drain-Source On-Resistance2 RDS(ON)
-
-
-
25
mÓ¨ VGS=10V, ID=7A
-
40
VGS=4.5V, ID=5A
Total Gate Charge2
Gate-Source Charge
Gate-Drain (“Miller”) Change
Qg
-
14.7
-
ID=7A
Qgs
-
7.1
-
nC VDS=20V
Qgd
-
6.8
-
VGS=4.5V
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Td(on)
Tr
Td(off)
Tf
-
11.5
-
-
6.3
-
-
28.2
-
-
12.6
-
VDS=20V
ID=1A
ns VGS=10V
RG=3.3Ó¨
RD=20Ó¨
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
- 1725 -
-
235
-
-
145
-
VGS=0V
pF VDS=25V
f=1.0MHz
Source-Drain Diode
Parameter
Forward On Voltage2
Continuous Source Current (Body Diode)
Symbol
VSD
IS
Min.
-
-
Typ.
-
-
Max.
1.3
1.54
Unit
Test Conditions
V IS=2.3A, VGS=0V
A VD=VG=0V, VS=1.3V
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse widthЉ300us, duty cycleЉ2%.
3. Mounted on 1 in2 copper pad of FR4 board; 90к/W when mounted on Min. copper pad.
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