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| GP4226 Datasheet, PDF (2/4 Pages) GTM CORPORATION – N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |||
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ISSUED DATE :2005/08/08
REVISED DATE :
Electrical Characteristics(Tj = 25Ä Unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Drain-Source Breakdown Voltage
BVDSS
30
Breakdown Voltage Temperature Coefficient ϦBVDSS /ϦTj
-
Gate Threshold Voltage
VGS(th)
1.0
Forward Transconductance
gfs
-
Gate-Source Leakage Current
IGSS
-
Drain-Source Leakage Current(Tj=25к)
-
IDSS
Drain-Source Leakage Current(Tj=70к)
-
-
0.03
-
15
-
-
-
-
-
3.0
-
Í100
1
25
V VGS=0, ID=250uA
V/к Reference to 25к, ID=1mA
V VDS=VGS, ID=250uA
S VDS=10V, ID=6A
nA VGS= Í20V
uA VDS=30V, VGS=0
uA VDS=24V, VGS=0
Static Drain-Source On-Resistance2 RDS(ON)
-
-
Total Gate Charge2
Qg
-
Gate-Source Charge
Qgs
-
Gate-Drain (âMillerâ) Change
Qgd
-
-
18
mÓ¨ VGS=10V, ID=8A
-
28
VGS=4.5V, ID=6A
20
30
ID=8A
5
-
nC VDS=24V
12
-
VGS=4.5V
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Td(on)
-
12
-
VDS=15V
Tr
-
8
-
ID=1A
ns VGS=10V
Td(off)
-
31
-
RG=3.3Ó¨
Tf
-
12
-
RD=15Ó¨
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
- 1450 2320
VGS=0V
-
320
-
pF VDS=25V
-
230
-
f=1.0MHz
Source-Drain Diode
Parameter
Forward On Voltage2
Reverse Recovery Time2
Reverse Recovery Charge
Symbol
VSD
Trr
Qrr
Min.
-
-
-
Typ.
-
27
18
Max.
1.2
-
-
Unit
Test Conditions
V IS=1.7A, VGS=0V
ns IS=8A, VGS=0V
nC dI/dt=100A/ s
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse widthÐ300us, duty cycleÐ2%.
3. Mounted on 1 in2 copper pad of FR4 board; 90к/W when mounted on Min. copper pad.
2/4
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