GMAC97A6 Datasheet, PDF (2/4 Pages) GTM CORPORATION – SENSITIVE GATE TRIACS SILICON BIDIRECTIONAL THYRISTORS 0.8A ,400V

ISSUED DATE :2005/09/28
REVISED DATE :
Electrical Characteristics (TC = 25к unless otherwise noted; Electricals apply in both directions)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Peak Repetitive Blocking Current (Note2)
(VDRM=400V and VRRM=400V; Gate Open)
TJ=25к
IDRM,IRRM
-
TJ=110к
-
10
A
100
On Characteristics
Peak On-State Voltage 2.0 s)
(ITM=±0.85A Peak; Pulse Width 2.0ms, Duty Cycle
Gate Trigger Current (Continuous dc)
(VD=12.0 Vdc, RL=100 )
MT2(+), G(+)
MT2(+), G( - )
MT2( - ), G( - )
MT2( - ), G(+)
2.0%)
VTM
-
-
1.9
V
IGT
-
-
-
-
5.0
5.0
mA
-
-
5.0
-
-
7.0
Gate Trigger Voltage (Continuous dc)
(VD=12.0 Vdc, RL=100 )
MT2(+), G(+) All Types
MT2(+), G( - ) All Types
MT2( - ), G( - ) All Types
MT2( - ), G(+) All Types
VGT
-
-
0.66
2.0
0.77
2.0
V
-
0.84
2.0
-
0.88
2.5
Gate Non-Trigger Voltage
(VD=12.0 V, RL=100 TJ=110к) All Four Quadrants
VGD
0.1
-
-
V
Holding Current
(VD=12.0 Vdc, Initiating Current=200mA, Gate Open)
IH
-
1.5
10
mA
Turn-On Time
(VD= VDRM=400V, ITM=1.0A pk, IG=25mA)
tgt
-
2.0
-
s
Dynamic Characteristics
Critical Rate of Rise of Commutation Voltage
(VD=VDRM=400V, ITM=0.84A, Commutation di/dt=0.3A/ms,
Gate Unenergized, TC=50к)
dV/dt (c)
-
5.0
-
V/ s
Critical Rate of Rise of Off-State Voltage
(VD=VDRM=400V, TC=110к, Gate Open, Exponential Waveform)
dv/dt
-
25
-
V/ s
Voltage Current Characteristic of Triacs
(Bidirectional Device)
Symbol
Parameter
VDRM Peak Repetitive Forward Off State Voltage
IDRM Peak Forward Blocking Current
VRRM Peak Repetitive Reverse Off State Voltage
IRRM Peak Reverse Blocking Current
VTM Maximum On State Voltage
IH Holding Current
Quadrant Definitions for a Triac
GMAC97A6
All polarities are referenced to MT1.
With in-phase signals (using standard AC lines) quadrants ҇and ҉
are used
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