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| GL9915 Datasheet, PDF (2/4 Pages) GTM CORPORATION – N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |||
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ISSUED DATE :2005/09/14
REVISED DATE :
Electrical Characteristics(Tj = 25Ä Unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Drain-Source Breakdown Voltage
BVDSS
20
Breakdown Voltage Temperature Coefficient ϦBVDSS /ϦTj
-
Gate Threshold Voltage
VGS(th)
0.5
Forward Transconductance
gfs
-
Gate-Source Leakage Current
IGSS
-
Drain-Source Leakage Current(Tj=25к)
-
IDSS
Drain-Source Leakage Current(Tj=70к)
-
-
0.03
-
13
-
-
-
-
-
1.2
-
Í100
1
25
V VGS=0, ID=250uA
V/к Reference to 25к, ID=1mA
V VDS=VGS, ID=250uA
S VDS=10V, ID=5A
nA VGS= Í12V
uA VDS=20V, VGS=0
uA VDS=16V, VGS=0
-
Static Drain-Source On-Resistance2 RDS(ON)
-
-
50
VGS=4.5V, ID=6A
mÓ¨
-
80
VGS=2.5V, ID=4A
Total Gate Charge2
Gate-Source Charge
Gate-Drain (âMillerâ) Change
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Qg
-
5
8
ID=10A
Qgs
-
1
-
nc VDS=16V
Qgd
-
2
-
VGS=4.5V
Td(on)
-
8
-
VDS=10V
Tr
-
55
-
ID=10A
ns VGS=5V
Td(off)
-
10
-
RG=3.3Ó¨
Tf
-
3
-
RD=1Ó¨
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
-
360 580
VGS=0V
-
70
-
pF VDS=20V
-
50
-
f=1.0MHz
Gate Resistance
Rg
-
0.78
-
Ó¨ f=1.0MHz
Source-Drain Diode
Parameter
Forward On Voltage2
Reverse Recovery Time2
Reverse Recovery Charge
Symbol
VSD
Trr
Qrr
Min.
-
-
-
Typ.
-
17
9
Max.
1.3
-
-
Unit
Test Conditions
V IS=2.5A, VGS=0V
ns IS=10A, VGS=0V
nC dI/dt=100A/ s
Notes: 1. Pulse width limited by safe operating area.
2. Pulse widthÐ300us, duty cycleÐ2%.
3. t Ð10sec, Surface mounted on 1 in2 copper pad of FR4 board.
GL9915
Page: 2/4
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