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GI9T16 Datasheet, PDF (2/4 Pages) GTM CORPORATION – N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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ISSUED DATE :2005/11/16
REVISED DATE :
Electrical Characteristics (Tj = 25к unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Drain-Source Breakdown Voltage
BVDSS
20
-
-
V VGS=0, ID=250uA
Breakdown Voltage Temperature Coefficient ϦBVDSS /ϦTj
-
0.01
-
V/к Reference to 25к, ID=1mA
Gate Threshold Voltage
Forward Transconductance
VGS(th) 0.5
-
1.5
gfs
-
19
-
V VDS=VGS, ID=250uA
S VDS=5V, ID=18A
Gate-Source Leakage Current
IGSS
-
- ±100 nA VGS= ±12V
Drain-Source Leakage Current(Tj=25к)
-
-
1
uA VDS=20V, VGS=0
IDSS
Drain-Source Leakage Current(Tj=150к)
-
-
25
uA VDS=16V, VGS=0
-
Static Drain-Source On-Resistance RDS(ON)
-
-
25
VGS=4.5V, ID=6A
m
-
40
VGS=2.5V, ID=5.2A
Total Gate Charge2
Gate-Source Charge
Gate-Drain (“Miller”) Change
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Qg
-
10 16
ID=18A
Qgs
-
3
-
nC VDS=16V
Qgd
-
5
-
VGS=4.5V
Td(on)
-
10
-
VDS=10V
Tr
-
98
-
ID=18A
ns VGS=5V
Td(off)
-
18
-
RG=3.3
Tf
-
6
-
RD=0.56
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
-
870 1390
VGS=0V
-
160
-
pF VDS=20V
-
120
-
f=1.0MHz
Gate Resistance
Rg
- 1.38 -
f=1.0MHz
Source-Drain Diode
Parameter
Forward On Voltage2
Reverse Recovery Time2
Reverse Recovery Charge
Symbol
VSD
Trr
Qrr
Min.
-
-
-
Typ.
-
19
10
Max.
1.3
-
-
Unit
Test Conditions
V IS=18A, VGS=0V
ns IS=18A, VGS=0V
nC dI/dt=100A/ s
Notes: 1. Pulse width limited by safe operating area.
2. Pulse widthЉ300us, duty cycleЉ2%.
GI9T16
Page: 2/4
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