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| GE75NF75 Datasheet, PDF (2/4 Pages) GTM CORPORATION – N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |||
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ISSUED DATE :2006/09/05
REVISED DATE :
Electrical Characteristics (Tj = 25к unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Drain-Source Breakdown Voltage
BVDSS
75
-
-
V VGS=0, ID=250uA
Gate Threshold Voltage
VGS(th) 2.0
-
4.0
V VDS=VGS, ID=250uA
Forward Transconductance
gfs
-
34
-
S VDS=15V, ID=40A
Gate-Source Leakage Current
IGSS
-
- ±100 nA VGS= ±25V
Drain-Source Leakage Current(Tj=25к)
-
IDSS
Drain-Source Leakage Current(Tj=55к)
-
Static Drain-Source On-Resistance3 RDS(ON)
-
Total Gate Charge3
Qg
-
Gate-Source Charge
Qgs
-
Gate-Drain (âMillerâ) Change
Turn-on Delay Time3
Qgd
-
Td(on)
-
Rise Time
Tr
-
Turn-off Delay Time
Td(off)
-
Fall Time
Tf
-
-
1
uA VDS=75, VGS=0
-
5
uA VDS=60V, VGS=0
-
11
m VGS=10V, ID=37.5A
114
-
33
-
18
-
ID=30A
nC VDS=30V
VGS=10V
21
-
VDS=30V
39
-
ns VGS=10V
70
-
RG=3
24
-
RL=1
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
- 7000 -
-
400
-
-
87
-
VGS=0V
pF VDS=30V
f=1.0MHz
Source-Drain Diode
Parameter
Forward On Voltage3
Reverse Recovery Time3
Reverse Recovery Charge
Continuous Source Current (Body Diode)
Symbol
VSD
Trr
Qrr
IS
Min.
-
-
-
-
Typ.
-
53
143
-
Max.
1.5
-
-
80
Unit
Test Conditions
V IS=75A, VGS=0V, Tj=25к
ns IS=30A, VGS=0V
nC dI/dt=100A/ s
A VD= VG=0V, VS=1.5V
Notes: 1. Pulse width limited by safe operating area.
2. Starting Tj=25к, VDD=20V, L=0.1mH, RG=25 , IAS=20A.
3. Pulse widthÐ300us, duty cycleÐ2%.
GE75NF75
Page: 2/4
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