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| G3J14 Datasheet, PDF (2/4 Pages) GTM CORPORATION – P-CHANNEL ENHANCEMENT MODE POWER MOSFET | |||
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ISSUED DATE :2005/03/04
REVISED DATE :
Electrical Characteristics(Tj = 25Ä Unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Drain-Source Breakdown Voltage
BVDSS -30
Breakdown Voltage Temperature Coefficient ϦBVDSS /ϦTj
-
Gate Threshold Voltage
VGS(th) -1.0
Forward Transconductance
gfs
-
Gate-Source Leakage Current
IGSS
-
Drain-Source Leakage Current(Tj=25к)
-
IDSS
Drain-Source Leakage Current(Tj=55к)
-
-
-0.02
-
5
-
-
-
-
-
-3.0
-
Í100
-1
-25
V VGS=0, ID=-250uA
V/к Reference to 25к, ID=-1mA
V VDS=VGS, ID=-250uA
S VDS=-10V, ID=-3.0A
nA VGS= Í20V
uA VDS=-30V, VGS=0
uA VDS=-24V, VGS=0
-
Static Drain-Source On-Resistance2 RDS(ON)
-
-
85
VGS=-10V, ID=-1.35A
-
145 mÓ¨ VGS=-4.5V, ID=-1.35A
Total Gate Charge2
Gate-Source Charge
Gate-Drain (âMillerâ) Change
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Qg
Qgs
Qgd
Td(on)
Tr
Td(off)
Tf
Ciss
Coss
Crss
-
-
170
VGS=-4.0V, ID=-1.35A
-
5
8
ID=-3A
-
1
-
nC VDS=-24V
-
3
-
VGS=-4.5V
-
8
-
VDS=-15V
-
5
-
ID=-1A
ns VGS=-10V
-
20
-
RG=3.3Ó¨
-
7
-
RD=15Ó¨
-
412 660
VGS=0V
-
91
-
pF VDS=-25V
-
62
-
f=1.0MHz
Source-Drain Diode
Parameter
Forward On Voltage2
Reverse Recovery Time2
Reverse Recovery Charge
Symbol
VSD
Trr
Qrr
Min.
-
-
-
Typ.
-
20
15
Max.
-1.2
-
-
Unit
Test Conditions
V IS=-1.2A, VGS=0V
ns IS=-3A, VGS=0V
nC dI/dt=100A/ s
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse widthÐ300us, duty cycleÐ2%.
3. Surface mounted on 1 in2 copper pad of FR4 board;270к/W when mounted on min. copper pad.
2/4
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