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G3407 Datasheet, PDF (2/4 Pages) GTM CORPORATION – P-CHANNEL ENHANCEMENT MODE POWER MOSFET
◁
CORPORATION ISSUED DATE :2007/01/15
REVISED DATE :
Electrical Characteristics (Tj = 25к unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Drain-Source Breakdown Voltage
BVDSS -30
-
-
V VGS=0, ID=-250uA
Gate Threshold Voltage
VGS(th) -1.0
-
-3.0
V VDS=VGS, ID=-250uA
Forward Transconductance
Gate-Source Leakage Current
gfs
IGSS
-
8.2
-
S VDS=-5V, ID=-4A
-
- ±100 nA VGS= ±20V
Drain-Source Leakage Current(Tj=25к)
-
-
-1
uA VDS=-30V, VGS=0
IDSS
Drain-Source Leakage Current(Tj=55к)
-
-
-5
uA VDS=-24V, VGS=0
-
Static Drain-Source On-Resistance RDS(ON)
-
-
52
VGS=-10V, ID=-4.1A
m
-
87
VGS=-4.5V, ID=-3.0A
Total Gate Charge2
Gate-Source Charge
Gate-Drain (“Miller”) Change
Qg
-
7
-
ID=-4A
Qgs
-
3.1
-
nC VDS=-15V
Qgd
-
3
-
VGS=-4.5V
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Td(on)
Tr
Td(off)
Tf
-
8.6
-
-
5
-
- 28.2 -
- 13.5 -
VDS=-15V
ns VGS=-10V
RG=3
RL=3.6
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Source-Drain Diode
Parameter
Forward On Voltage2
Reverse Recovery Time2
Reverse Recovery Charge
Ciss
Coss
Crss
Rg
-
700 840
VGS=0V
-
120
-
pF VDS=-15V
-
75
-
f=1.0MHz
-
10
-
f=1.0MHz
Symbol
VSD
Trr
Qrr
Min.
-
-
-
Typ.
-
27
15
Max.
-1.0
-
-
Unit
Test Conditions
V IS=-1.0A, VGS=0V
ns IS=-4A, VGS=0V
nC dI/dt=100A/ s
Continuous Source Current (Body Diode)
IS
-
-
-2.2
A VD=VG=0V, VS=-1.0V
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse widthЉ300us, duty cycleЉ2%.
3. Surface mounted on 1 in2 copper pad of FR4 board; 270к/W when mounted on Min. copper pad.
G3407
Page: 2/4
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