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G3400 Datasheet, PDF (2/4 Pages) GTM CORPORATION – N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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ISSUED DATE :2006/08/14
REVISED DATE :
Electrical Characteristics (Tj = 25к unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Drain-Source Breakdown Voltage
BVDSS
30
-
-
V VGS=0, ID=250uA
Gate Threshold Voltage
VGS(th) 0.7
-
1.4
V VDS=VGS, ID=250uA
Forward Transconductance
gfs
-
15
-
S VDS=5V, ID=5A
Gate-Source Leakage Current
IGSS
-
- ±100 nA VGS= ±12V
Drain-Source Leakage Current(Tj=25к)
-
-
1
uA VDS=24V, VGS=0
IDSS
Drain-Source Leakage Current(Tj=55к)
-
-
5
uA VDS=24V, VGS=0
-
-
28
VGS=10V, ID=5.8A
Static Drain-Source On-Resistance RDS(ON) -
-
33 m VGS=4.5V, ID=5.0A
Total Gate Charge2
Gate-Source Charge
Gate-Drain (“Miller”) Change
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Qg
Qgs
Qgd
Td(on)
Tr
Td(off)
Tf
-
-
52
VGS=2.5V, ID=4.0A
-
9.7 12
ID=5.8A
-
1.6
-
nC VDS=15V
-
3.1
-
VGS=4.5V
-
3.3
-
-
4.8
-
- 26.3 -
-
4.1
-
VDS=15V
ns VGS=10V
RG=3
RL=2.7
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
-
823 1030
VGS=0V
-
99
-
pF VDS=15V
-
77
-
f=1.0MHz
Gate Resistance
Source-Drain Diode
Rg
-
1.2 3.6
f=1.0MHz
Parameter
Forward On Voltage2
Reverse Recovery Time2
Reverse Recovery Charge
Symbol
VSD
Trr
Qrr
Min.
-
-
-
Typ.
-
16
8.9
Max.
1.0
-
-
Unit
Test Conditions
V IS=1.0A, VGS=0V
ns IS=5A, VGS=0V
nC dI/dt=100A/ s
Continuous Source Current (Body Diode)
IS
-
-
2.5
A VD=VG=0V, VS=1.0V
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse widthЉ300us, duty cycleЉ2%.
3. Surface mounted on 1 in2 copper pad of FR4 board; 270к/W when mounted on Min. copper pad.
G3400
Page: 2/4
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