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G301K Datasheet, PDF (2/4 Pages) GTM CORPORATION – N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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ISSUED DATE :2006/01/19
REVISED DATE :
Electrical Characteristics (Tj = 25к unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Drain-Source Breakdown Voltage
BVDSS
30
-
-
V VGS=0, ID=250uA
Breakdown Voltage Temperature Coefficient ϦBVDSS /ϦTj
-
0.06
-
V/к Reference to 25к, ID=1mA
Gate Threshold Voltage
Forward Transconductance
VGS(th) 0.5
-
1.5
V VDS=VGS, ID=250uA
gfs
-
600
-
mS VDS=10V, ID=600mA
Gate-Source Leakage Current
IGSS
-
-
±10 uA VGS= ±16V
Drain-Source Leakage Current(Tj=25к)
-
-
1
uA VDS=30V, VGS=0
IDSS
Drain-Source Leakage Current(Tj=70к)
-
-
100 uA VDS=24V, VGS=0
-
-
1
VGS=10V, ID=500mA
Static Drain-Source On-Resistance RDS(ON) -
-
2
VGS=4.5V, ID=400mA
Total Gate Charge2
Gate-Source Charge
Gate-Drain (“Miller”) Change
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
-
-
3
VGS=2.7V, ID=200mA
Qg
-
1
1.6
ID=600mA
Qgs
-
0.5
-
nC VDS=50V
Qgd
-
0.5
-
VGS=4.5V
Td(on)
-
12
-
VDS=30V
Tr
-
10
-
ID=600mA
ns VGS=10V
Td(off)
-
56
-
RG=3.3
Tf
-
29
-
RD=52
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
-
32 50
VGS=0V
-
8
-
pF VDS=25V
-
6
-
f=1.0MHz
Source-Drain Diode
Parameter
Forward On Voltage2
Symbol
VSD
Min.
-
Typ.
-
Max.
1.2
Unit
Test Conditions
V IS=1.2A, VGS=0V
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse widthЉ300us, duty cycleЉ2%.
3. Surface mounted on 1 in2 copper pad of FR4 board; 270к/W when mounted on Min. copper pad.
G301K
Page: 2/4
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