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| G2U9972 Datasheet, PDF (2/4 Pages) GTM CORPORATION – N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |||
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ISSUED DATE :2005/07/05
REVISED DATE :
Electrical Characteristics(Tj = 25Ä Unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Drain-Source Breakdown Voltage
BVDSS
60
Breakdown Voltage Temperature Coefficient ϦBVDSS /ϦTj
-
Gate Threshold Voltage
VGS(th)
1.0
Forward Transconductance
gfs
-
Gate-Source Leakage Current
IGSS
-
Drain-Source Leakage Current(Tj=25к)
-
IDSS
Drain-Source Leakage Current(Tj=150к)
-
-
0.06
-
55
-
-
-
-
-
3.0
-
Í100
10
25
V VGS=0, ID=250uA
V/к Reference to 25к, ID=1mA
V VDS=VGS, ID=250uA
S VDS=10V, ID=35A
nA VGS= Í25V
uA VDS=60V, VGS=0
uA VDS=48V, VGS=0
-
Static Drain-Source On-Resistance3 RDS(ON)
-
-
18
VGS=10V, ID=35A
mÓ¨
-
22
VGS=4.5V, ID=25A
Total Gate Charge3
Gate-Source Charge
Gate-Drain (âMillerâ) Change
Turn-on Delay Time3
Rise Time
Turn-off Delay Time
Fall Time
Qg
-
32
51
ID=35A
Qgs
-
8
-
nC VDS=48V
Qgd
-
20
-
VGS=4.5V
Td(on)
-
11
-
VDS=30V
Tr
-
58
-
ID=35A
ns VGS=10V
Td(off)
-
45
-
RG=3.3Ó¨
Tf
-
80
-
RD=0.86Ó¨
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
- 3170 5070
pF VGS=0V
-
280
-
-
230
-
S VDS=25V
nA f=1.0MHz
Gate Resistance
Rg
-
1.7
-
Ó¨ f=1.0MHz
Source-Drain Diode
Parameter
Forward On Voltage3
Reverse Recovery Time
Reverse Recovery Charge
Symbol
VSD
Trr
Qrr
Min.
-
-
-
Typ.
-
50
48
Max.
1.2
-
-
Unit
Test Conditions
V IS=35A, VGS=0V
ns IS=35A, VGS=0V
nC dI/dt=100A/ s
Notes: 1. Pulse width limited by Max. junction temperature.
2. Staring Tj=25к, VDD=30V, L=1mH, RG=25Ө, IAS=30A.
3. Pulse widthÐ300us, duty cycleÐ2%.
G2U9972
Page: 2/4
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