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G2313 Datasheet, PDF (2/4 Pages) GTM CORPORATION – P-CHANNEL ENHANCEMENT MODE POWER MOSFET
◁
ISSUED DATE :2005/05/16
REVISED DATE :
Electrical Characteristics(Tj = 25ć Unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Drain-Source Breakdown Voltage
BVDSS -20
Breakdown Voltage Temperature Coefficient ϦBVDSS /ϦTj
-
Gate Threshold Voltage
VGS(th)
-
Forward Transconductance
gfs
-
Gate-Source Leakage Current
IGSS
-
Drain-Source Leakage Current(Tj=25к)
-
IDSS
Drain-Source Leakage Current(Tj=70к)
-
-
-0.01
-
4.0
-
-
-
-
-
-1.2
-
̈́100
-1
-25
V VGS=0, ID=-250uA
V/к Reference to 25к, ID=-1mA
V VDS=VGS, ID=-250uA
S VDS=-5V, ID=-2A
nA VGS= ̈́12V
uA VDS=-20V, VGS=0
uA VDS=-16V, VGS=0
-
Static Drain-Source On-Resistance2 RDS(ON)
-
-
120
VGS=-10V, ID=-2.8A
-
160 mÓ¨ VGS=-4.5V, ID=-2.5A
Total Gate Charge2
Gate-Source Charge
Gate-Drain (“Miller”) Change
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Qg
Qgs
Qgd
Td(on)
Tr
Td(off)
Tf
Ciss
Coss
Crss
-
-
300
VGS=-2.5V, ID=-2A
-
5
8
ID=-2A
-
1
-
nC VDS=-16V
-
2
-
VGS=-4.5V
-
6
-
VDS=-10V
-
17
-
ID=-1A
ns VGS=-10V
-
16
-
RG=3.3Ó¨
-
5
-
RD=10Ó¨
-
270 430
VGS=0V
-
70
-
pF VDS=-20V
-
55
-
f=1.0MHz
Source-Drain Diode
Parameter
Forward On Voltage2
Reverse Recovery Time2
Reverse Recovery Charge
Symbol
VSD
Trr
Qrr
Min.
-
-
-
Typ.
-
20
15
Max.
-1.2
-
-
Unit
Test Conditions
V IS=-1.2A, VGS=0V
ns IS=-2A, VGS=0V
nC dI/dt=100A/ s
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse widthЉ300us, duty cycleЉ2%.
3. Surface mounted on 1 in2 copper pad of FR4 board, t Љ10sec; 270к/W when mounted on Min.
copper pad.
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