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G2306A Datasheet, PDF (2/4 Pages) GTM CORPORATION – N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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ISSUED DATE :2005/01/17
REVISED DATE :2006/07/17C
Electrical Characteristics(Tj = 25ć Unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Drain-Source Breakdown Voltage
BVDSS
30
-
Breakdown Voltage Temperature Coefficient ϦBVDSS /ϦTj
-
0.1
-
V VGS=0, ID=250uA
-
V/к Reference to 25к, ID=1mA
Gate Threshold Voltage
Forward Transconductance
VGS(th) 0.5
-
1.2
gfs
-
13
-
V VDS=VGS, ID=250uA
S VDS=5V, ID=5A
Gate-Source Leakage Current
IGSS
-
- ±100 nA VGS= ±12V
Drain-Source Leakage Current(Tj=25к)
-
-
1
uA VDS=30V, VGS=0
IDSS
Drain-Source Leakage Current(Tj=70к)
-
-
25
uA VDS=24V, VGS=0
-
-
30
VGS=10V, ID=5A
-
Static Drain-Source On-Resistance RDS(ON)
-
-
35
VGS=4.5V, ID=5A
m
-
50
VGS=2.5V, ID=2.6A
Total Gate Charge2
Gate-Source Charge
Gate-Drain (“Miller”) Change
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Qg
Qgs
Qgd
Td(on)
Tr
Td(off)
Tf
Ciss
Coss
Crss
-
-
90
VGS=1.8V, ID=1.0A
-
8.5 15
ID=5A
-
1.5
-
nC VDS=16V
-
3.2
-
VGS=4.5V
-
6
-
VDS=15V
-
20
-
ID=5A
ns VGS=10V
-
20
-
RG=3.3
-
3
-
RD=3
-
660 1050
VGS=0V
-
90
-
pF VDS=25V
-
70
-
f=1.0MHz
Source-Drain Diode
Parameter
Forward On Voltage2
Reverse Recovery Time2
Reverse Recovery Charge
Symbol
VSD
Trr
Qrr
Min.
-
-
-
Typ.
-
14
7
Max.
1.2
-
-
Unit
Test Conditions
V IS=1.2A, VGS=0V
ns IS=5A, VGS=0V
nC dI/dt=100A/ s
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse widthЉ300us, duty cycleЉ2%.
3. Surface mounted on 1 in2 copper pad of FR4 board; 270к/W when mounted on Min. copper pad.
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