G2306 Datasheet, PDF (2/4 Pages) GTM CORPORATION – N-CHANNEL ENHANCEMENT MODE POWER MOSFET

CORPORATION ISSUED DATE :2004/10/12
REVISED DATE :2005/03/22B
Electrical Characteristics(Tj = 25ć Unless otherwise specified)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Drain-Source Breakdown Voltage
BVDSS
20
Breakdown Voltage Temperature Coefficient
ϦBVDSS/ϦTj
-
Gate Threshold Voltage
Forward Transconductance
VGS(th)
0.5
gfs
-
Gate-Source Leakage Current
IGSS
-
Drain-Source Leakage Current(Tj=25к)
-
IDSS
Drain-Source Leakage Current(Tj=70к)
-
-
Static Drain-Source On-Resistance
-
RDS(ON)
-
Total Gate Charge²
Gate-Source Charge
Gate-Drain (“Miller”) Change
Turn-on Delay Time²
Rise Time
-
Qg
-
Qgs
-
Qgd
-
Td(on)
-
Tr
-
Turn-off Delay Time
Fall Time
Input Capacitance
Td(off)
-
Tf
-
Ciss
-
Output Capacitance
Reverse Transfer Capacitance
Coss
-
Crss
-
-
-
0.1
-
-
1.2
13
-
-
̈́100
-
1
-
10
-
30
-
35
-
50
-
90
8.7
-
1.5
-
3.6
-
6
-
14
-
18.4
-
2.8
-
603
-
144
-
111
-
V
V/к
V
S
nA
uA
uA
mÓ¨
nC
ns
VGS=0, ID=250uA
Reference to 25к, ID=1mA
VDS= VGS, ID=250uA
VDS=5.0V, ID=5.3A
VGS= ̈́12V
VDS=20V, VGS=0
VDS=16V, VGS=0
ID=5.5A, VGS=10V
ID=5.3A, VGS=4.5V
ID=2.6A, VGS=2.5V
ID=1.0A, VGS=1.8V
ID=5.3A
VDS=10V
VGS=4.5V
VDS=15V
ID=1A
VGS=10V
RG=2Ó¨
RD=15Ó¨
VGS=0V
pF
VDS=15V
f=1.0MHz
Source-Drain Diode
Forward On Voltage²
Reverse Recovery Time
Reverse Recovery Charge
VSD
-
-
1.2
V
IS=1.2A, VGS=0 Tj=25к
Trr
-
16.8
-
ns
IS=5.0A,VGS=0
Qrr
-
11
-
nC ^{dI/dt=100A/Ó´s}
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse widthЉ300us, duty cycleЉ2%.
3. Surface mounted on 1 in² copper pad of FR4 board;270к/w when mounted on min. copper pad.
Characteristics Curve
2/4