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G2305A Datasheet, PDF (2/4 Pages) GTM CORPORATION – P-CHANNEL ENHANCEMENT MODE POWER MOSFET
◁
ISSUED DATE :2005/03/21
REVISED DATE :
Electrical Characteristics(Tj = 25ć Unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Drain-Source Breakdown Voltage
BVDSS -30
Breakdown Voltage Temperature Coefficient ϦBVDSS /ϦTj
-
Gate Threshold Voltage
VGS(th) -0.5
Forward Transconductance
gfs
-
Gate-Source Leakage Current
IGSS
-
Drain-Source Leakage Current(Tj=25к)
-
IDSS
Drain-Source Leakage Current(Tj=70к)
-
-
-
V VGS=0, ID=-250uA
-0.1
-
V/к Reference to 25к, ID=-1mA
-
-1.2
V VDS=VGS, ID=-250uA
9
-
S VDS=-5V, ID=-3A
-
̈́100 nA VGS= ̈́12V
-
-1
uA VDS=-30V, VGS=0
-
-25
uA VDS=-24V, VGS=0
-
-
60
VGS=-10V, ID=-3.2A
-
Static Drain-Source On-Resistance RDS(ON)
-
-
80
VGS=-4.5V, ID=-3.0A
mÓ¨
-
150
VGS=-2.5V, ID=-2.0A
Total Gate Charge2
Gate-Source Charge
Gate-Drain (“Miller”) Change
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Qg
Qgs
Qgd
Td(on)
Tr
Td(off)
Tf
Ciss
Coss
Crss
-
-
250
VGS=-1.8V, ID=-1.0A
-
10
18
ID=-3.2A
-
1.8
-
nC VDS=-24V
-
3.6
-
VGS=-4.5V
-
7
-
VDS=-15V
-
15
-
ID=-3.2A
ns VGS=-10V
-
21
-
RG=3.3Ó¨
-
15
-
RD=4.6Ó¨
-
735 1325
VGS=0V
-
100
-
pF VDS=-25V
-
80
-
f=1.0MHz
Source-Drain Diode
Parameter
Forward On Voltage2
Reverse Recovery Time2
Reverse Recovery Charge
Symbol
VSD
Trr
Qrr
Min.
-
-
-
Typ.
-
24
19
Max.
-1.2
-
-
Unit
Test Conditions
V IS=-1.2A, VGS=0V
ns IS=-3.2A, VGS=0V
nC dI/dt=100A/ s
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse widthЉ300us, duty cycleЉ2%.
3. Surface mounted on 1 in2 copper pad of FR4 board; 270к/W when mounted on min. copper pad.
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