G2305 Datasheet, PDF (2/4 Pages) GTM CORPORATION – P-CHANNEL ENHANCEMENT MODE POWER MOSFET

CORPORATION ISSUED DATE :2004/10/12
REVISED DATE :2005/03/22B
Electrical Characteristics(Tj = 25ć Unless otherwise specified)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Drain-Source Breakdown Voltage
BVDSS
-20
Breakdown Voltage Temperature Coefficient
ϦBVDSS/ϦTj
-
Gate Threshold Voltage
Forward Transconductance
VGS(th)
gfs
-0.5
-
Gate-Source Leakage Current
IGSS
-
Drain-Source Leakage Current(Tj=25к)
-
IDSS
Drain-Source Leakage Current(Tj=70к)
-
-
Static Drain-Source On-Resistance²
-
RDS(ON)
-
Total Gate Charge²
Gate-Source Charge
Gate-Drain (“Miller”) Change
Turn-on Delay Time²
Rise Time
-
Qg
-
Qgs
-
Qgd
-
Td(on)
-
Tr
-
Turn-off Delay Time
Fall Time
Input Capacitance
Td(off)
-
Tf
-
Ciss
-
Output Capacitance
Reverse Transfer Capacitance
Coss
-
Crss
-
-
-
-0.1
-
-
-
9
-
-
̈́100
-
-1
-
-10
-
53
-
65
-
100
-
250
10.6
-
2.32
-
3.68
-
5.9
-
3.6
-
32.4
-
2.6
-
740
-
167
-
126
-
V
V/к
V
S
nA
uA
uA
mÓ¨
nC
ns
VGS=0, ID=-250uA
Reference to 25к, ID=-1mA
VDS= VGS, ID=-250uA
VDS=-5.0V, ID=-2.8A
VGS= ̈́12V
VDS=-20V, VGS=0
VDS=-16V, VGS=0
ID=-4.5A, VGS=-10V
ID=-4.2A, VGS=-4.5V
ID=-2.0A, VGS=-2.5V
ID=-1.0A, VGS=-1.8V
ID=-4.2A
VDS=-16V
VGS=-4.5V
VDS=-15V
ID=-4.2A,
VGS=-10V
RG=6Ó¨
RD=3.6Ó¨
VGS=0V
pF V_DS=-15V
f=1.0MHz
Source-Drain Diode
Forward On Voltage²
Reverse Recovery Time
Reverse Recovery Charge
VSD
-
-
-1.2
V
IS=-1.2A, VGS=0 Tj=25к
Trr
-
27.7
-
ns
IS=-4.2A,VGS=0
Qrr
-
22
-
nC ^{dI/dt=100A/Ó´s}
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse widthЉ300us, duty cycleЉ2%.
3. Surface mounted on 1 in² copper pad of FR4 board;270к/w when mounted on min. copper pad.
Characteristics Curve
2/4