G2304 Datasheet, PDF (2/4 Pages) GTM CORPORATION – N-CHANNEL ENHANCEMENT MODE POWER MOSFET

CORPORATION ISSUED DATE :2004/10/12
REVISED DATE :2005/03/22B
Electrical Characteristics(Tj = 25ć Unless otherwise specified)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Drain-Source Breakdown Voltage
BVDSS
25
Breakdown Voltage Temperature Coefficient
ϦBVDSS/ϦTj
-
Gate Threshold Voltage
VGS(th)
1.0
Forward Transconductance
gfs
-
Gate-Source Leakage Current
IGSS
-
Drain-Source Leakage Current(Tj=25к)
-
IDSS
Drain-Source Leakage Current(Tj=70к)
-
-
-
V
VGS=0, ID=250uA
0.1
-
V/к Reference to 25к, ID=1mA
-
3.0
V
VDS= VGS, ID=250uA
3.4
-
-
̈́100
S
VDS=4.5V, ID=2.5A
nA VGS= ̈́20V
-
1
uA
VDS=25V, VGS=0
-
10
uA
VDS=25V, VGS=0
Static Drain-Source On-Resistance²
Total Gate Charge²
Gate-Source Charge
Gate-Drain (“Miller”) Change
Turn-on Delay Time²
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
RDS(ON)
Qg
Qgs
Qgd
Td(on)
Tr
Td(off)
Tf
Ciss
Coss
Crss
-
-
117
mÓ¨ ^{ID=2.5A, VGS=10V}
-
-
190
ID=2.0A, VGS=4.5V
-
5.9
10
ID=2.5A
-
0.8
-
-
2.1
-
nC VDS=15V
VGS=10V
-
4.5
-
-
11.5
-
-
12
-
-
3
-
VDS=15V
ID=1A
ns
VGS=10V
RG=6Ó¨
RD=15Ó¨
-
110
-
-
85
-
-
39
-
VGS=0V
pF VDS=15V
f=1.0MHz
Source-Drain Diode
Forward On Voltage²
VSD
Continuous Source Current(Body Diode)
IS
Pulsed Source Current (Body Diode) ¹
ISM
-
-
1.2
V
IS=1.25A, VGS=0 Tj=25к
-
-
1
A
VD= VG=0V, VS=1.2V
-
-
10
A
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse widthЉ300us, duty cycleЉ2%.
3. Surface mounted on 1 in² copper pad of FR4 board;270к/w when mounted on min. copper pad.
Characteristics Curve
2/4