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G2300 Datasheet, PDF (2/4 Pages) GTM CORPORATION – CMOS Positive Voltage Regulator
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ISSUED DATE :2006/07/26
REVISED DATE :2006/11/09B
Electrical Characteristics (Tj = 25к unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Drain-Source Breakdown Voltage
BVDSS
20
-
Breakdown Voltage Temperature Coefficient ϦBVDSS /ϦTj
-
0.1
-
V VGS=0, ID=250uA
-
V/к Reference to 25к, ID=1mA
Gate Threshold Voltage
Gate-Source Leakage Current
VGS(th) 0.5
IGSS
-
-
1.0
V VDS=VGS, ID=250uA
- ±100 nA VGS= ±8V
Drain-Source Leakage Current(Tj=25к)
-
-
1
uA VDS=20V, VGS=0
IDSS
Drain-Source Leakage Current(Tj=70к)
-
-
25
uA VDS=16V, VGS=0
-
Static Drain-Source On-Resistance2 RDS(ON)
-
Total Gate Charge2
Qg
-
Gate-Source Charge
Qgs
-
Gate-Drain (“Miller”) Change
Turn-on Delay Time2
Qgd
-
Td(on)
-
Rise Time
Tr
-
Turn-off Delay Time
Td(off)
-
Fall Time
Tf
-
-
28
VGS=4.5V, ID=6A
m
-
38
VGS=2.5V, ID=5.2A
10
-
ID=6A
3.6
-
nC VDS=10V
2
-
VGS=4.5V
8
-
VDD=10V
6
-
ns ID=1A
19
-
VGS=4.5V
7
-
RG=0.2
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
-
550
-
-
120
-
-
80
-
VGS=0V
pF VDS=15V
f=1.0MHz
Source-Drain Diode
Parameter
Forward On Voltage2
Symbol
VSD
Min.
-
Typ.
0.7
Max.
1.3
Unit
Test Conditions
V IS=1.25A, VGS=0V
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse widthЉ300us, duty cycleЉ2%.
3. Surface mounted on FR4 board, t Љ10sec.
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