English
Language : 

G1332E Datasheet, PDF (2/4 Pages) GTM CORPORATION – N-CHANNEL ENHANCEMENT MODE POWER MOSFET
◁
ISSUED DATE :2005/03/10
REVISED DATE :2006/11/24C
Electrical Characteristics (Tj = 25к unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Drain-Source Breakdown Voltage
BVDSS
20
-
-
V VGS=0, ID=250uA
Breakdown Voltage Temperature Coefficient ϦBVDSS /ϦTj
-
0.02
-
V/к Reference to 25к, ID=1mA
Gate Threshold Voltage
Forward Transconductance
VGS(th) 0.5
-
1.2
V VDS=VGS, ID=250uA
gfs
-
1
-
S VDS=5V, ID=600mA
Gate-Source Leakage Current
IGSS
-
-
±10 uA VGS= ±5V
Drain-Source Leakage Current(Tj=25к)
-
-
1
uA VDS=20V, VGS=0
IDSS
Drain-Source Leakage Current(Tj=70к)
-
-
10
uA VDS=16V, VGS=0
-
Static Drain-Source On-Resistance RDS(ON)
-
Total Gate Charge2
Qg
-
Gate-Source Charge
Qgs
-
Gate-Drain (“Miller”) Change
Turn-on Delay Time2
Qgd
-
Td(on)
-
Rise Time
Tr
-
Turn-off Delay Time
Td(off)
-
Fall Time
Tf
-
Input Capacitance
Ciss
-
Output Capacitance
Coss
-
Reverse Transfer Capacitance
Crss
-
-
600
VGS=4.5V, ID=600mA
m
- 1200
VGS=2.5V, ID=400mA
1.3
2
ID=600mA
0.3
-
nC VDS=16V
0.5
-
VGS=4.5V
4
-
VDS=10V
10
-
ID=600mA
ns VGS=10V
15
-
RG=3.3
2
-
RD=16.7
38 60
VGS=0V
17
-
pF VDS=10V
12
-
f=1.0MHz
Source-Drain Diode
Parameter
Forward On Voltage2
Symbol
VSD
Min.
-
Typ.
-
Max.
1.2
Unit
Test Conditions
V IS=300mA, VGS=0V
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse widthЉ300us, duty cycleЉ2%.
3. Surface mounted on FR4 board, tЉ10sec.
G1332E
Page: 2/4
 ▷