GSS9926 Datasheet, PDF (1/4 Pages) GTM CORPORATION – N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Pb Free Plating Product
ISSUED DATE :2004/05/27
REVISED DATE :2006/11/15E
GSS9926
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS
RDS(ON)
ID
20V
28m
6A
Description
The GSS9926 provides the designer with the best combination of fast switching, ruggedized device design,
ultra low on-resistance and cost-effectiveness.
Features
*Low on-resistance
*Capable of 2.5V gate drive
*Low drive current
Package Dimensions
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
5.80
6.20
4.80
5.00
3.80
4.00
0°
8°
0.40
0.90
0.19
0.25
REF.
M
H
L
J
K
G
Millimeter
Min.
Max.
0.10
0.25
0.35
0.49
1.35
1.75
0.375 REF.
45°
1.27 TYP.
Absolute Maximum Ratings
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
Continuous Drain Current³, VGS@4.5V
Continuous Drain Current³, VGS@4.5V
Pulsed Drain Current¹
Power Dissipation
V_GS
I_D @Ta=25к
I_D @Ta=70к
I_DM
P_D @Ta=25к
Linear Derating Factor
Operating Junction and Storage Temperature Range Tj, Tstg
Ratings
20
±8
6
4.8
20
2
0.016
-55 ~ +150
Unit
V
V
A
A
A
W
W/к
к
Thermal Data
Parameter
Thermal Resistance Junction-ambient³
Max.
Symbol
Rthj-a
Value
62.5
Unit
к/W
GSS9926
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