GSS6982 Datasheet, PDF (1/7 Pages) GTM CORPORATION – DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Pb Free Plating Product
ISSUED DATE :2006/04/24
REVISED DATE :
GSS6982
CH1 BVDSS 30V
N-CH RDS(ON) 18m
DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET
N-CH ID
CH2 BVDSS
8.5A
30V
N-CH RDS(ON) 26m
Description
N-CH ID
7.3A
The GSS6982 provide the designer with the best combination of fast switching, ruggedized device design, ultra
low on-resistance and cost-effectiveness.
Features
*Low On-resistance
*Fast Switching
Package Dimensions
REF.
A
B
C
D
E
F
Absolute Maximum Ratings
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current³
Continuous Drain Current³
Pulsed Drain Current¹
Total Power Dissipation
Linear Derating Factor
V_DS
V_GS
I_D @TA=25к
I_D @TA=70к
I_DM
P_D @TA=25к
Operating Junction and Storage Temperature Range Tj, Tstg
Thermal Data
Parameter
Thermal Resistance Junction-ambient³
Max.
Symbol
Rthj-a
Millimeter
Min.
Max.
5.80
6.20
4.80
5.00
3.80
4.00
0°
8°
0.40
0.90
0.19
0.25
REF.
M
H
L
J
K
G
Ratings
CH-1
CH-2
30
30
±25
±25
8.5
7.3
6.8
5.8
30
30
2.0
0.016
-55 ~ +150
Value
62.5
Millimeter
Min.
Max.
0.10
0.25
0.35
0.49
1.35
1.75
0.375 REF.
45°
1.27 TYP.
Unit
V
V
A
A
A
W
W/к
к
Unit
к/W
GSS6982
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