GSS4816S Datasheet, PDF (1/8 Pages) GTM CORPORATION – DUAL N-CHANNEL MOSFET WITH SCHOTTKY DIODE

Pb Free Plating Product
ISSUED DATE :2006/04/28
REVISED DATE :
GSS4816S
CH1 BVDSS 30V
N-CH RDS(ON) 22m
DUAL N-CHANNEL MOSFET WITH SCHOTTKY DIODE
N-CH ID
CH2 BVDSS
6.7A
30V
N-CH RDS(ON) 13m
Description
N-CH ID
11.5A
The GSS4816S provide the designer with the best combination of fast switching, ruggedized device design,
low on-resistance and cost-effectiveness.
The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited
for low voltage applications such as DC/DC converters.
Features
*Simple Drive Requirement
*DC-DC Converter Suitable
*Fast Switching Performance
Package Dimensions
REF.
A
B
C
D
E
F
Absolute Maximum Ratings
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current³
Continuous Drain Current³
Pulsed Drain Current¹
Total Power Dissipation
V_DS
V_GS
I_D @TA=25к
I_D @TA=70к
I_DM
P_D @TA=25к
Linear Derating Factor
Operating Junction and Storage Temperature Range Tj, Tstg
Thermal Data
Parameter
Thermal Resistance Junction-ambient³
Thermal Resistance Junction-ambient³
Thermal Resistance Junction-ambient³
Symbol
Rthj-a(CH-1)
Rthj-a(CH-2)
Rthj-a(Schottky)
Millimeter
Min.
Max.
5.80
6.20
4.80
5.00
3.80
4.00
0°
8°
0.40
0.90
0.19
0.25
REF.
M
H
L
J
K
G
Ratings
CH-1
CH-2
30
30
±20
±20
6.7
11.5
5.3
9.2
30
40
1.4
2.4
0.01
0.02
-55 ~ +150
Value
Typ.
Max.
70
90
42
53
52
60
Millimeter
Min.
Max.
0.10
0.25
0.35
0.49
1.35
1.75
0.375 REF.
45°
1.27 TYP.
Unit
V
V
A
A
A
W
W/к
к
Unit
к/W
к/W
к/W
GSS4816S
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