GSS2030 Datasheet, PDF (1/7 Pages) GTM CORPORATION – N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Pb Free Plating Product
ISSUED DATE :2006/04/24
REVISED DATE :
GSS2030
N-CH BVDSS 20V
N-CH RDS(ON) 30m
N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
N-CH ID
P-CH BVDSS
6A
-20V
N-CH RDS(ON) 50m
Description
N-CH ID
-5A
The GSS2030 provide the designer with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited
for low voltage applications such as DC/DC converters.
Features
*Simple Drive Requirement
*Low On-resistance
*Fast Switching
Package Dimensions
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
5.80
6.20
4.80
5.00
3.80
4.00
0°
8°
0.40
0.90
0.19
0.25
REF.
M
H
L
J
K
G
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Symbol
V_DS
Ratings
N-channel P-channel
20
-20
Gate-Source Voltage
Continuous Drain Current³
Continuous Drain Current³
Pulsed Drain Current¹
Total Power Dissipation
V_GS
I_D @TA=25к
I_D @TA=70к
I_DM
P_D @TA=25к
±8
±8
6
-5
4.8
-4
20
-20
2.0
Linear Derating Factor
0.016
Operating Junction and Storage Temperature Range Tj, Tstg
-55 ~ +150
Thermal Data
Parameter
Thermal Resistance Junction-ambient³
Max.
Symbol
Rthj-a
Value
62.5
Millimeter
Min.
Max.
0.10
0.25
0.35
0.49
1.35
1.75
0.375 REF.
45°
1.27 TYP.
Unit
V
V
A
A
A
W
W/к
к
Unit
к/W
GSS2030
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