GSMBTA14 Datasheet, PDF (1/2 Pages) GTM CORPORATION – NPN EPITAXIAL PLANAR TRANSISTOR

ISSUED DATE :2005/08/31
REVISED DATE :2006/05/10B
G S M B TA1 4
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The GSMBTA14 is designed for Darlington amplifier applications.
Package Dimensions
REF.
A
A1
A2
D
E
HE
Millimeter
Min. Max.
0.80 1.10
0
0.10
0.80 1.00
1.80 2.20
1.15 1.35
1.80 2.40
REF.
L1
L
b
c
e
Q1
Millimeter
Min. Max.
0.42 REF.
0.15
0.35
0.25
0.40
0.10
0.25
0.65 REF.
0.15 BSC.
Absolute Maximum Ratings at Ta = 25к
Parameter
Symbol
Ratings
Unit
Junction Temperature
Tj
+150
к
Storage Temperature
Tstg
-55~+150
к
Collector to Base Voltage
VCBO
30
V
Collector to Emitter Voltage
VCEO
30
V
Emitter to Base Voltage
VEBO
10
V
Collector Current
IC
500
mA
Total Power Dissipation
PD
225
mW
Electrical Characteristics (Ta = 25к unless otherwise noted)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
BVCBO
30
-
-
V
IC=100uA, IE=0
BVCEO
30
-
-
V
IC=100uA, IB=0
BVEBO
10
-
-
V
IE=10uA, IC=0
ICBO
-
-
100
nA
VCB=30V, IE=0
IEBO
-
-
100
nA
VEB=10V, IC=0
*VCE(sat)
-
-
1.5
V
IC=100mA, IB=0.1mA
*VBE(on)
-
-
2.0
V
VCE=5V, IC=100mA
*hFE1
10K
-
-
VCE=5V, IC=10mA
*hFE2
20K
-
-
VCE=5V, IC=100mA
fT
125
-
-
MHz VCE=5V, IC=10mA, f=100MHz
Cob
-
-
6
pF
VCB=10V, IE=0, f=1MHz
* Pulse Test: Pulse WidthЉ380 s, Duty CycleЉ2%
GSMBTA14
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