GSMBTA06 Datasheet, PDF (1/2 Pages) GTM CORPORATION – NPN SILICON TRANSISTOR

G S M B TA0 6
NPN SILICON TRANSISTOR
Description
The GSMBTA06 is designed for general purpose amplifier applications.
Package Dimensions
ISSUED DATE :2005/08/31
REVISED DATE :
REF.
A
A1
A2
D
E
HE
Millimeter
Min. Max.
0.80 1.10
0
0.10
0.80 1.00
1.80 2.20
1.15 1.35
1.80 2.40
REF.
L1
L
b
c
e
Q1
Millimeter
Min. Max.
0.42 REF.
0.15
0.35
0.25
0.40
0.10
0.25
0.65 REF.
0.15 BSC.
Absolute Maximum Ratings at Ta = 25к
Parameter
Symbol
Ratings
Unit
Junction Temperature
Tj
+150
ć
Storage Temperature
Tstg
-55~+150
ć
Collector to Base Voltage
VCBO
80
V
Collector to Emitter Voltage
VCEO
80
V
Emitter to Base Voltage
VEBO
4
V
Collector Current
IC
500
mA
Total Power Dissipation
PD
225
mW
Electrical Characteristics(Ta = 25к,unless otherwise noted)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
BVCBO
80
-
-
V
IC=100uA, IE=0
BVCEO
80
-
-
V
IC=1mA, IB=0
BVEBO
4
-
-
V
IE=100uA, IC=0
ICBO
-
-
100
nA
VCB=80V, IE=0
ICEO
-
-
100
nA
VCE=80V, IB=0
*VCE(sat)
-
-
250
mV IC=100mA, IB=10mA
*VBE(on)
-
-
1.2
V
VCE=1V, IC=100mA
*hFE1
50
-
-
VCE=1V, IC=10mA
*hFE2
50
-
-
VCE=1V, IC=100mA
fT
100
-
-
MHz VCE=2V, IC=10mA, f=100MHz
* Pulse Test: Pulse WidthЉ380 s, Duty CycleЉ2%
GSMBTA06
Page: 1/2