GSMBT9015 Datasheet, PDF (1/2 Pages) GTM CORPORATION – PNP EPITAXIAL PLANAR TRANSISTOR

ISSUED DATE :2004/12/20
REVISED DATE :
GSMBT9015
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The GSMBT9015 is designed for use in pre-amplifier of low level and low noise.
Package Dimensions
REF.
A
A1
A2
D
E
HE
Millimeter
Min. Max.
0.80 1.10
0
0.10
0.80 1.00
1.80 2.20
1.15 1.35
1.80 2.40
REF.
L1
L
b
c
e
Q1
Millimeter
Min. Max.
0.42 REF.
0.15
0.35
0.25
0.40
0.10
0.25
0.65 REF.
0.15 BSC.
Absolute Maximum Ratings at Ta = 25к
Parameter
Symbol
Ratings
Unit
Junction Temperature
Tj
+150
ć
Storage Temperature
Tstg
-55 ~ +150
ć
Collector to Base Voltage
VCBO
-50
V
Collector to Emitter Voltage
VCEO
-45
V
Emitter to Base Voltage
VEBO
-5
V
Collector Current
IC
-100
mA
Total Power Dissipation
PD
225
mW
Characteristics at
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*VBE(sat)
VBE(on)
*hFE
Min.
-50
-45
-5
-
-
-
-
-0.6
100
fT
100
Cob
-
Ta = 25к
Typ.
-
-
-
-
-
-0.20
-0.82
-0.65
200
190
4.5
Max.
-
-
-
-50
-50
-0.7
-1.0
-0.75
600
-
7
Classification Of hFE
Rank
Range
3GB
100 - 300
3GC
200 - 600
Unit
V
V
V
nA
nA
V
V
V
MHz
pF
Test Conditions
IC=-100uA , IE=0
IC=-1mA, IB=0
IE=-100uA, IC=0
VCB=-50V, IE=0
VEB=-5V, IC=0
IC=-100mA, IB=-5mA
IC=-100mA, IB=-5mA
VCE=-5V, IC=-2mA
VCE=-5V, IC=-1mA
VCE=-5V, IC=-10mA
VCB=-10V, f=1MHz
* Pulse Test: Pulse WidthЉ380 s, Duty CycleЉ2%
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