GSMBT9014 Datasheet, PDF (1/3 Pages) GTM CORPORATION – NPN EPITAXIAL TRANSISTOR

GSMBT9014
NPN EPITAXIAL TRANSISTOR
Description
The GSMBT9014 is designed for general purpose amplifier applications.
Package Dimensions
ISSUED DATE :2004/12/20
REVISED DATE :
REF.
A
A1
A2
D
E
HE
Millimeter
Min. Max.
0.80 1.10
0
0.10
0.80 1.00
1.80 2.20
1.15 1.35
1.80 2.40
REF.
L1
L
b
c
e
Q1
Millimeter
Min. Max.
0.42 REF.
0.15
0.35
0.25
0.40
0.10
0.25
0.65 REF.
0.15 BSC.
Absolute Maximum Ratings at Ta = 25к
Parameter
Symbol
Ratings
Unit
Junction Temperature
Tj
+150
ć
Storage Temperature
Tstg
-55 ~ +150
ć
Collector to Base Voltage
VCBO
50
V
Collector to Emitter Voltage
VCEO
45
V
Emitter to Base Voltage
VEBO
5
V
Collector Current
IC
100
mA
Total Power Dissipation
PD
225
mW
Characteristics at
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*VBE(sat)
VBE(on)
*hFE
Min.
50
45
5
-
-
-
-
0.58
100
fT
150
Cob
-
Ta = 25к
Typ.
-
-
-
-
-
0.14
0.84
0.63
280
270
2.20
Max.
-
-
-
50
50
0.3
1
0.7
1000
-
3.5
Classification Of hFE
Rank
Range
3CB
100 - 300
3CC
200 - 600
Unit
V
V
V
nA
nA
V
V
V
MHz
pF
Test Conditions
IC=100uA , IE=0
IC=1mA, IB=0
IE=100uA, IC=0
VCB=50V, IE=0
VEB=5V, IC=0
IC=100mA, IB=5mA
IC=100mA, IB=5mA
VCE=5V, IC=2mA
VCE=5V, IC=1mA
VCE=5V, IC=10mA
VCB=10V, f=1MHz, IE=0
* Pulse Test: Pulse WidthЉ380 s, Duty CycleЉ2%
3CD
400 - 1000
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