GSMBT8050 Datasheet, PDF (1/2 Pages) GTM CORPORATION – NPN EPITAXIAL TRANSISTOR

GSMBT8050
NPN EPITAXIAL TRANSISTOR
Description
The GSMBT8050 is designed for general purpose amplifier applications.
Package Dimensions
ISSUED DATE :2005/08/31
REVISED DATE :
REF.
A
A1
A2
D
E
HE
Millimeter
Min. Max.
0.80 1.10
0
0.10
0.80 1.00
1.80 2.20
1.15 1.35
1.80 2.40
REF.
L1
L
b
c
e
Q1
Millimeter
Min. Max.
0.42 REF.
0.15
0.35
0.25
0.40
0.10
0.25
0.65 REF.
0.15 BSC.
Absolute Maximum Ratings at Ta = 25к
Parameter
Symbol
Ratings
Unit
Junction Temperature
Tj
+150
ć
Storage Temperature
Tstg
-55~+150
ć
Collector to Base Voltage
VCBO
25
V
Collector to Emitter Voltage
VCEO
20
V
Emitter to Base Voltage
VEBO
5
V
Collector Current
IC
700
mA
Total Power Dissipation
PD
225
mW
Electrical Characteristics(Ta = 25к,unless otherwise noted)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
BVCBO
25
-
-
V
IC=10uA, IE=0
BVCEO
20
-
-
V
IC=1mA, IB=0
BVEBO
5
-
-
V
IE=10uA, IC=0
ICBO
-
-
1
uA
VCB=30V, IE=0
IEBO
-
-
100
nA
VEB=5V, IC=0
VCE(sat)
-
-
500
mV IC=500mA, IB=50mA
VBE(on)
-
-
1
V
VCE=1V, IC=150mA
hFE
120
-
500
VCE=1V, IC=150mA
fT
150
-
-
MHz VCE=10V, IC=20mA, f=100MHz
Cob
-
-
10
pF
VCB=10V, f=1MHz
Classification Of hFE
Rank
Range
D9C
120 ~ 200
D9D
150 ~ 300
D9E
250 ~ 500
GSMBT8050
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