GSMBT3906 Datasheet, PDF (1/2 Pages) GTM CORPORATION – PNP EPITAXIAL PLANAR TRANSISTOR

ISSUED DATE :2005/06/08
REVISED DATE :
GSMBT3906
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The GSMBT3906 is designed for general purpose switching and amplifier applications.
Package Dimensions
Absolute Maximum Ratings at Ta = 25к
Parameter
Symbol
Junction Temperature
Tj
Storage Temperature
Tstg
Collector to Base Voltage
VCBO
Collector to Emitter Voltage
VCEO
Emitter to Base Voltage
VEBO
Collector Current
IC
Total Power Dissipation
PD
Characteristics at
Symbol
BVCBO
BVCEO
BVEBO
ICES
IEBO
VCE(sat)1
VCE(sat)2
VBE(sat)1
VBE(sat)2
hFE1
hFE2
hFE3
hFE4
hFE5
fT
Cob
Cib
td
tr
tstg
tf
Min.
-40
-40
-5
-
-
-
-
-0.65
-
60
80
100
60
30
250
-
-
-
-
-
-
Ta = 25к
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
-50
-50
-0.25
-0.4
-0.85
-0.95
-
-
300
-
-
-
4.5
10
35
35
225
75
Unit
V
V
V
nA
nA
V
V
V
V
MHz
pF
pF
ns
ns
ns
ns
REF.
A
A1
A2
D
E
HE
Millimeter
Min. Max.
0.80 1.10
0
0.10
0.80 1.00
1.80 2.20
1.15 1.35
1.80 2.40
REF.
L1
L
b
c
e
Q1
Millimeter
Min. Max.
0.42 REF.
0.15
0.35
0.25
0.40
0.10
0.25
0.65 REF.
0.15 BSC.
Ratings
Unit
+150
ć
-55 ~ +150
ć
-40
V
-40
V
-5
V
-200
mA
300
mW
Test Conditions
IC=-10uA
IC=-10mA
IE=-10uA
VCB=-30V
VEB=-3V
IC=-10mA, IB=-1mA
IC=-50mA, IB=-5mA
IC=-10mA, IB=-1mA
IC=-50mA, IB=-5mA
VCE=-1V, IC=-0.1mA
VCE=-1V, IC=-1mA
VCE=-1V, IC=-10mA
VCE=-1V, IC=-50mA
VCE=-1V, IC=-100mA
VCE=-20V, IE=-10mA, f=100MHz
VCB=-10V, f=100KHz
VEB=-0.5V, f=100KHz
VCC=-3V, VBE(OFF)=-0.5V, IC=-10mA, IB1=-1mA
VCC=-3V, VBE(OFF)=-0.5V, IC=-10mA, IB1=-1mA
VCC=-3V, IC=-10mA, IB1=-IB2=-1mA
VCC=-3V, IC=-10mA, IB1=-IB2=-1mA
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