GSMBT2222A Datasheet, PDF (1/2 Pages) GTM CORPORATION – NPN EPITAXIAL PLANAR TRANSISTOR

CORPORATION ISSUED DATE :2005/01/12
REVISED DATE :
GSM BT2222A _{NPN EPITAXIAL PLANAR TRANSISTOR}
Description
The GSMBT2222A is designed for general purpose amplifier and high speed, medium-power switching applications.
Features
Ô¦High frequency current gain
Ô¦High speed switching
Ô¦For complementary use with PNP type GSMBT2907A
Package Dimensions
Absolute Maximum Ratings at Ta = 25к
Parameter
Junction Temperature
Storage Temperature
Collector to Base Voltage at Ta=25к
Collector to Emitter Voltage at Ta=25к
Emitter to Base Voltage at Ta=25к
Collector Current at Ta=25к
Total Power Dissipation at Ta=25к
Symbol
Tj
Tstg
VCBO
VCEO
VEBO
IC
PD
Characteristics at Ta = 25к
Symbol
BVCBO
BVCEO
BVEBO
Min.
75
40
6
Typ.
-
-
-
Max.
-
-
-
ICBO
ICEX
IEBO
*VCE(sat)1
*VCE(sat)2
*VBE(sat)1
-
-
10
-
-
10
-
-
10
-
-
500
-
-
1.0
-
-
1.2
*VBE(sat)2
*hFE1
*hFE2
-
-
2.0
35
-
-
50
-
-
*hFE3
*hFE4
*hFE5
fT
75
-
-
100
-
300
40
-
-
300
-
-
Unit
V
V
V
nA
nA
nA
mV
V
V
V
MHz
REF.
A
A1
A2
D
E
HE
Millimeter
Min. Max.
0.80 1.10
0
0.10
0.80 1.00
1.80 2.20
1.15 1.35
1.80 2.40
REF.
L1
L
b
c
e
Q1
Millimeter
Min. Max.
0.42 REF.
0.15
0.35
0.25
0.40
0.10
0.25
0.65 REF.
0.15 BSC.
Ratings
Unit
+150
ć
-55 ~ +150
ć
75
V
40
V
6
V
600
mA
225
mW
Test Conditions
IC=100uA , IE=0
IC=10mA,IB=0
IE=10uA ,IC=0
VCB=60V, IE=0
VCE=60V ,VEB(OFF)=3V
VEB=3V
IC=380mA, IB=10mA
IC=500mA, IB=50mA
IC=150mA, IB=15mA
IC=500mA, IB=50mA
VCE=10V, IC=100uA
VCE=10V, IC=1mA
VCE=10V, IC=10mA
VCE=10V, IC=150mA
VCE=10V, IC=500mA
VCB=20V, IC=20mA, f=100MHz
* Pulse Test: Pulse WidthЉ380 s, Duty CycleЉ2%
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