GSMBT1815 Datasheet, PDF (1/2 Pages) GTM CORPORATION – NPN EPITAXIAL PLANAR TRANSISTOR

GSMBT1815
ISSUED DATE :2004/12/08
REVISED DATE :
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The GSMBT1815 is designed for use in driver stage of AF amplifier and general purpose amplification.
Package Dimensions
REF.
A
A1
A2
D
E
HE
Millimeter
Min. Max.
0.80 1.10
0
0.10
0.80 1.00
1.80 2.20
1.15 1.35
1.80 2.40
REF.
L1
L
b
c
e
Q1
Millimeter
Min. Max.
0.42 REF.
0.15
0.35
0.25
0.40
0.10
0.25
0.65 REF.
0.15 BSC.
Absolute Maximum Ratings at Ta = 25к
Parameter
Symbol
Ratings
Unit
Junction Temperature
Tj
+150
ć
Storage Temperature
Tstg
-55~+150
ć
Collector to Base Voltage
VCBO
60
V
Collector to Emitter Voltage
VCEO
50
V
Emitter to Base Voltage
VEBO
5
V
Collector Current
IC
150
mA
Total Power Dissipation
PD
225
mW
Characteristics at Ta = 25к
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*VBE(sat)
*hFE1
*hFE2
fT
Cob
Min.
60
50
5
-
-
-
-
120
25
80
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
100
100
250
1
700
-
-
3.5
Unit
V
V
V
nA
nA
mV
V
MHz
pF
Test Conditions
IC=100uA
IC=1mA
IE=10uA
VCB=60V
VEB=5V
IC=100mA, IB=10mA
IC=100mA, IB=10mA
VCE=6V, IC=2mA
VCE=6V, IC=150mA
VCE=10V, IC=1mA, f=100MHz
VCB=10V, f=1MHz
Classification Of hFE1
Rank
Range
C4Y
120 - 240
* Pulse Test: Pulse WidthЉ380us, Duty CycleЉ2%
C4G
200 - 400
C4B
350 - 700
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