GSD669A Datasheet, PDF (1/3 Pages) GTM CORPORATION – NPN EPITAXIAL PLANAR TRANSISTOR

ISSUED DATE :2003/10/23
REVISED DATE :2004/11/29B
GSD669A NPN EPITAXIAL PLANAR TRANSISTOR
Description
The GSD669A is designed for frequency power amplifier.
Features
*Low frequency power amplifier Complementary pair with GSB649A
Package Dimensions
D
E
S1
TO-92
b1
S E A T IN G
PLANE
C
e1
b
e
REF.
A
S1
b
b1
C
Millimeter
Min. Max.
4.45 4.7
1.02
-
0.36 0.51
0.36 0.76
0.36 0.51
REF.
D
E
L
e1
e
Absolute Maximum Ratings(Ta = 25к,unless otherwise specified)
Parameter
Ratings
Collector to Base Voltage
VCBO
180
Collector to Emitter Voltage
VCEO
160
Emitter to Base Voltage
VEBO
5
Collect Current(DC)
IC
1.5
Collect Current*(Pulse)
ICP
3
Junction Temperature
Tj
+150
Storage Temperature Range
TsTG
-55 ~ +150
Total Power Dissipation (TC=25к)
PD
1
Millimeter
Min. Max.
4.44 4.7
3.30 3.81
12.70 -
1.150 1.390
2.42 2.66
Unit
V
V
V
A
A
ć
ć
W
Electrical Characteristics(Ta = 25к,unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit
V(BR)CBO
180
-
-
V
V(BR)CEO
160
-
-
V
V(BR)EBO
5
-
-
V
ICBO
-
-
10
uA
*VCE(sat)
-
-
1
V
*VBE(on)
-
-
1.5
V
*hFE1
60
-
200
*hFE2
30
-
-
fT
-
140
-
MHz
Cob
-
14
-
pF
Test Conditions
IC=1mA ,IE=0
IC=10mA ,RBE=Ќ
IE=1mA ,IC=0
VCB=160V , IE=0
lC=600mA,IB=50mA
VCE=5V,IC=150mA
VCE=5V,IC=150mA
VCE=5V,IC=500mA
VCE=5V,IC=150mA
VCB=10V ,IE=0,f=1MHz
* Pulse Test: Pulse WidthЉ380us, Duty CycleЉ2%
Classification Of hFE1
Rank
Range
B
60-120
C
100-200
GSD669A
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