GSD2656 Datasheet, PDF (1/2 Pages) GTM CORPORATION – NPN EPITAXIAL TRANSISTOR

GSD2656
NPN EPITAXIAL TRANSISTOR
Description
The GSD2656 is designed for general purpose amplifier applications.
Package Dimensions
ISSUED DATE :2006/01/18
REVISED DATE :
REF.
A
A1
A2
D
E
HE
Millimeter
Min. Max.
0.80 1.10
0
0.10
0.80 1.00
1.80 2.20
1.15 1.35
1.80 2.40
REF.
L1
L
b
c
e
Q1
Millimeter
Min. Max.
0.42 REF.
0.15
0.35
0.25
0.40
0.10
0.25
0.65 REF.
0.15 BSC.
Absolute Maximum Ratings at Ta = 25к
Parameter
Symbol
Ratings
Unit
Junction Temperature
Tj
+150
к
Storage Temperature
Tstg
-55~+150
к
Collector to Base Voltage
VCBO
30
V
Collector to Emitter Voltage
VCEO
30
V
Emitter to Base Voltage
VEBO
6
V
Collector Current
IC
1
A
Total Power Dissipation
PD
225
mW
Electrical Characteristics (Ta = 25к, unless otherwise noted)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
BVCBO
30
-
-
V
IC=10uA, IE=0
BVCEO
30
-
-
V
IC=1mA, IB=0
BVEBO
6
-
-
V
IE=10uA, IC=0
ICBO
-
-
100
nA
VCB=30V, IE=0
IEBO
-
-
100
nA
VEB=6V, IC=0
VCE(sat)
-
-
350
mV IC=500mA, IB=25mA
*hFE
120
-
500
VCE=2V, IC=100mA
*fT
-
400
-
MHz VCE=2V, IE=-100mA, f=100MHz
Cob
-
5
-
pF
VCB=10V, f=1MHz
Classification Of hFE
Rank
EUC
Range
120 ~ 200
EUD
160 ~ 300
EUE
250 ~ 500
*Pulsed Test
GSD2656
Page: 1/2