GSD1624 Datasheet, PDF (1/3 Pages) GTM CORPORATION – NPN EPITAXIAL PLANAR TRANSISTOR

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GSD1624
NPN EPITAXIAL PLANAR SILICON TRANSISTOR
HIGH CURRENT SWITCHING APPLICATION
Description
The GSD1624 applies to voltage regulators, relay drivers, lamp drivers, and electrical equipment .
FEATURES
*Adoption of FBET, MBIT processes
*Low collector-to-emitter saturation voltage
*Fast switching speed
*Large current capacity and wide ASO
Package Dimension
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
4.4
4.6
4.05 4.25
1.50 1.70
1.30 1.50
2.40 2.60
0.89 1.20
REF.
G
H
I
J
K
L
M
Millimeter
Min. Max.
3.00 REF.
1.50 REF.
0.40 0.52
1.40 1.60
0.35 0.41
5q TYP.
0.70 REF.
Absolute Maximum Ratings (Ta=25к,unless otherwise specified)
Parameter
Symbol
Ratings
Unit
Collector to Base Voltage
VCBO
60
V
Collector to Emitter Voltage
VCEO
50
V
Emitter to Base Voltage
VEBO
6
V
Collector Current (DC)
IC
3
A
Collector Current (PULSE)(note1)
IC
6
A
Total Power Dissipation
PD
0.5
W
Junction Temperature
Tj
+150
ć
Storage Temperature
Tstg
-55 ~ +150
ć
Note 1:Single pulse,PW=10ms
ELECTRICAL Characteristics (Ta=25к,unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
V(BR)CBO
60
-
-
V
IC=10uA ,IE=0
V(BR)CEO
50
-
-
V
IC=1mA,RBE=Ќ
V(BR)EBO
6
-
-
V
IE=10uA,Ic=0
ICBO
-
-
1
uA
VCB=40V
IEBO
-
-
1
uA
VEB=4V
VCE(sat)
-
0.19
0.5
V
IC=2A, IB=100mA
VBE(sat)
-
0.94
1.2
V
IC=2A, IB=100mA
hFE
100
-
560
-
VCE=2V, IC=0.1A
fT
-
150
-
MHz VCE=10V, Ic=50mA
Cob
-
25
-
pF
VCB=10V, f=1MHz
tstg
-
650
-
ns
See test circuit
tf
-
35
-
ns
See test circuit