GSC945 Datasheet, PDF (1/2 Pages) GTM CORPORATION – NPN EPITAXIAL SILICON TRANSISTOR

ISSUED DATE :2005/06/14
REVISED DATE :
GSC945
NPN EPITAXIAL SILICON TRANSISTOR
Description
The GSC945 is an audio frequency amplifier high frequency OSC NPN transistor.
Features
Ô¦Collector-Emitter Voltage BVCBO=50V
Ô¦Collector current up to 150mA
Ô¦High hFE linearity
Package Dimensions
D
E
S1
TO-92
b1
S E A T IN G
PLANE
C
e1
b
e
Absolute Maximum Ratings (TA=25к)
Parameter
Symbol
Collector to Base Voltage
VCBO
Collector to Emitter Voltage
VCEO
Emitter to Base Voltage
VEBO
Collector Current
IC
Base Current
IB
Total Device Dissipation
PD
Junction Temperature
TJ
Storage Temperature
Tstg
REF.
A
S1
b
b1
C
Millimeter
Min. Max.
4.45
4.7
1.02
-
0.36
0.51
0.36
0.76
0.36
0.51
REF.
D
E
L
e1
e
Millimeter
Min.
Max.
4.44
4.7
3.30
3.81
12.70
-
1.150 1.390
2.42
2.66
Ratings
Unit
60
V
50
V
5
V
150
mA
50
mA
250
mW
125
к
-55 ~ +150
к
Electrical Characteristics (TA = 25к unless otherwise noted)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
BVCBO
60
-
-
V
IC=100uA, IE=0
BVCEO
50
-
-
V
IC=1mA, IB=0
BVEBO
ICBO
IEBO
5
-
-
V
IE=1uA, IC=0
-
-
100
nA
VCB=40V
-
-
100
nA
VEB=3V
VCE(sat)
-
0.1
0.3
V
IC=100mA, IB=10mA
hFE
90
-
600
VCE=6V, IC=1mA
fT
100
190
-
MHz VCE=10V, IC=50mA
Cob
-
2.0
3.0
pF
VCB=10V, IE=0, f=1MHz
NF
-
4.0
6.0
dB
IC=0.1mA , VCE=6V, RG=10kÓ¨, f=100HZ
Classification Of hFE
Rank
R
Range
90 ~ 180
Q
135 ~ 270
P
200 ~ 400
K
300 ~ 600
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