GSC4672 Datasheet, PDF (1/2 Pages) GTM CORPORATION – NPN EPITAXIAL SILICON TRANSISTOR

ISSUED DATE :2005/07/15
REVISED DATE :
GSC4762
NPN EPITAXIAL SILICON TRANSISTOR
Description
The GSC4672 is designed for low frequency amplifier applications.
Features
Ô¦Low saturation voltage, typically VCE(sat) =0.1V at IC/IB=1A/50mA
Ô¦Excellent DC current gain characteristics
Package Dimensions
D
E
S1
TO-92
b1
S E A T IN G
PLANE
C
e1
b
e
Absolute Maximum Ratings (TA=25к)
Parameter
Symbol
Collector to Base Voltage
VCBO
Collector to Emitter Voltage
VCEO
Emitter to Base Voltage
VEBO
Collector Current (DC)
IC
Collector Current (Pulse PW=10ms)
IC
Total Device Dissipation
PD
Junction Temperature
TJ
Storage Temperature
Tstg
REF.
A
S1
b
b1
C
Millimeter
Min. Max.
4.45
4.7
1.02
-
0.36
0.51
0.36
0.76
0.36
0.51
REF.
D
E
L
e1
e
Millimeter
Min.
Max.
4.44
4.7
3.30
3.81
12.70
-
1.150 1.390
2.42
2.66
Ratings
Unit
60
V
50
V
6
V
2
A
5
A
750
mW
150
к
-55 ~ +150
к
Electrical Characteristics (TA = 25к unless otherwise noted)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
BVCBO
60
-
-
V
IC=50uA, IE=0
BVCEO
50
-
-
V
IC=1mA, IB=0
BVEBO
6
-
-
V
IE=50uA, IC=0
ICBO
IEBO
-
-
100
nA
VCB=60V, IE=0
-
-
100
nA
VEB=5V, IC=0
*VCE(sat)
-
0.1
0.35
V
IC=1A, IB=50mA
*hFE
120
-
400
VCE=2V, IC=500mA
fT
-
210
-
MHz VCE=2V, IE=500mA, f=100MHz
Cob
-
25
-
pF
VCB=10V, IE=0, f=1MHz
*Pulse Test: Pulse WidthЉ380 s, Duty CycleЉ2%
Classification Of hFE
Rank
Range
A
120 ~ 240
B
200 ~ 400
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