GSC4420 Datasheet, PDF (1/4 Pages) GTM CORPORATION – N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Pb Free Plating Product
ISSUED DATE :2006/10/19
REVISED DATE :
GSC4420
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS
RDS(ON)
ID
30V
10.5m
13.7A
Description
The GSC4420 uses advanced trench technology to provide excellent on-resistance, shoot-through immunity
and body diode characteristics.
The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited
for use as a synchronous switch or in PWM applications.
Features
*Simple Drive Requirement
*Lower On-resistance
*Fast Switching Characteristic
Package Dimensions
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
5.80
6.20
4.80
5.00
3.80
4.00
0°
8°
0.40
0.90
0.19
0.25
REF.
M
H
L
J
K
G
Millimeter
Min.
Max.
0.10
0.25
0.35
0.49
1.35
1.75
0.375 REF.
45°
1.27 TYP.
Absolute Maximum Ratings
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
Continuous Drain Current, V_GS@10V
Continuous Drain Current, V_GS@10V
Pulsed Drain Current¹
Total Power Dissipation
V_GS
I_D @TA=25к
I_D @TA=70к
I_DM
P_D @TA=25к
Linear Derating Factor
Operating Junction and Storage Temperature Range Tj, Tstg
Ratings
30
±12
13.7
9.7
60
2.5
0.02
-55 ~ +150
Unit
V
V
A
A
A
W
W/к
к
Thermal Data
Parameter
Thermal Resistance Junction-ambient
Max.
Symbol
Rthj-amb
Value
50
Unit
ć/W
GSC4420
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