GSC1815 Datasheet, PDF (1/2 Pages) GTM CORPORATION – NPN EPITAXIAL PLANAR TRANSISTOR

CORPORATION ISSUED DATE :2004/07/09
REVISED DATE :2004/11/29B
GSC1815
NPN EPITAXIAL PLANAR TANSISTOR
Description
The GSC1815 is designed for use in driver stage of AF amplifier and general purpose applications.
Features
*Complementary to GSA1015
Package Dimensions
D
E
S1
TO-92
b1
S E A T IN G
PLANE
C
e1
b
e
Absolute Maximum Ratings at Ta = 25к
Parameter
Symbol
Junction Temperature
Tj
Storage Temperature
Tstg
Collector to Base Voltage
VCBO
Collector to Emitter Voltage
VCEO
Emitter to Base Voltage
VEBO
Collector Current
IC
Base Current
IB
Total Power Dissipation
PD
REF.
A
S1
b
b1
C
Millimeter
Min. Max.
4.45 4.7
1.02
-
0.36 0.51
0.36 0.76
0.36 0.51
REF.
D
E
L
e1
e
Millimeter
Min. Max.
4.44 4.7
3.30 3.81
12.70 -
1.150 1.390
2.42 2.66
Ratings
Unit
+150
ć
-55 ~ +150
ć
60
V
50
V
5
V
150
mA
50
mA
400
mW
Characteristics at Ta = 25ć
Symbol
Min.
Typ.
BVCBO
60
-
BVCEO
50
-
BVEBO
5
-
ICBO
-
-
IEBO
-
-
*VCE(sat)
-
0.1
*VBE(sat)
-
-
hFE1
70
-
hFE2
25
-
fT
80
-
Cob
-
-
Max.
-
-
-
100
100
0.25
1.0
700
-
-
3.0
Classification Of hFE1
Rank
O
Range
70-140
Y
120-240
Unit
V
V
V
nA
nA
V
V
MHz
pF
Test Conditions
IC=100uA
IC=1mA
IE=10uA
VCE=60V, IE = 0
VEB=5V, Ic = 0
IC=100mA, IB=10mA
IC=100mA, IB=10mA
VCE=6V, IC=2mA
VCE=6V, IC=150mA
VCE=10V, IC=1mA, f=100MHz
VCB=10V, IE = 0,f=1MHz
* Pulse Test: Pulse WidthЉ380us, Duty CycleЉ2%
GR
200-400
L
350-700
GSC1815
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