GSC1473A Datasheet, PDF (1/2 Pages) GTM CORPORATION – NPN SILICON TRANSISTOR

ISSUED DATE :2005/04/15
REVISED DATE :2006/03/21B
GSC1473A
NPN SILICON TRANSISTOR
Description
The GSC1473A is designed for general amplification.
Features
Ô¦High Collector to Emitter Voltage VCEO
Ô¦High Transition Frequency fT
Package Dimensions
D
TO-92
E
S1
b1
S E A T IN G
PLANE
C
e1
b
e
Absolute Maximum Ratings (TA=25к)
Parameter
Symbol
Collector to Base Voltage
VCBO
Collector to Emitter Voltage
VCEO
Emitter to Base Voltage
VEBO
Peak Collector Current
ICP
Collector Current (continuous)
IC
Total Device Dissipation
PD
Junction Temperature
TJ
Storage Temperature
Tstg
REF.
A
S1
b
b1
C
Millimeter
Min. Max.
4.45
4.7
1.02
-
0.36
0.51
0.36
0.76
0.36
0.51
REF.
D
E
L
e1
e
Millimeter
Min.
Max.
4.44
4.7
3.30
3.81
12.70
-
1.150 1.390
2.42
2.66
Ratings
300
300
7
100
70
750
150
-55 ~ +150
Unit
V
V
V
mA
mA
mW
к
к
Electrical Characteristics (TA = 25к unless otherwise noted)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
BVCBO
300
-
-
V
IC=100uA, IE=0
BVCEO
300
-
-
V
IC=1mA, IB=0
BVEBO
ICEO
7
-
-
V
IE=1uA, IC=0
-
-
1
uA
VCE=120V
VCE(sat)
-
-
1.2
V
IC=50mA, IB=5mA
hFE
30
-
220
VCE=10V, IC=5mA
fT
50
80
-
MHz VCE=10V, IC=-10mA, f=200MHz
Cob
-
-
10
pF
VCB=10V, f=1MHz
Classification Of hFE
Rank
hFE
P
30 ~ 100
Q
60 ~ 150
R
100 ~ 220
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