GSBC817 Datasheet, PDF (1/2 Pages) GTM CORPORATION – NPN EPITAXIAL PLANAR TRANSISTOR

ISSUED DATE :2005/06/08
REVISED DATE :
GSBC817
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The GSBC817 is designed for switching and AF amplifier application, suitable for driver storages and low power output storages.
Package Dimensions
REF.
A
A1
A2
D
E
HE
Millimeter
Min. Max.
0.80 1.10
0
0.10
0.80 1.00
1.80 2.20
1.15 1.35
1.80 2.40
REF.
L1
L
b
c
e
Q1
Millimeter
Min. Max.
0.42 REF.
0.15
0.35
0.25
0.40
0.10
0.25
0.65 REF.
0.15 BSC.
Absolute Maximum Ratings at Ta = 25к
Parameter
Symbol
Ratings
Unit
Junction Temperature
Tj
+150
ć
Storage Temperature
Tstg
-55 ~ +150
ć
Collector to Base Voltage
VCBO
50
V
Collector to Emitter Voltage
VCEO
45
V
Emitter to Base Voltage
VEBO
5
V
Collector Current
IC
800
mA
Total Power Dissipation
PD
225
mW
Characteristics at
Symbol
BVCBO
BVCEO
BVCES
BVEBO
ICES
IEBO
Min.
50
45
50
5
-
-
*VCE(sat)
-
*VBE(on)
-
*hFE
100
fT
-
Cob
-
Ta = 25к
Typ.
-
-
-
-
-
-
-
-
-
100
-
Max.
-
-
-
-
100
100
700
1.2
630
-
12
Classification Of hFE
Rank
Range
8FA
100 - 250
8FB
160 - 400
Unit
V
V
V
V
nA
nA
mV
V
MHz
pF
Test Conditions
IC=100uA
IC=10mA
IC=100uA
IE=100uA
VCE=25V
VEB=4V
IC=500mA, IB=50mA
VCE=1V, IC=300mA
VCE=1V, IC=100mA
VCE=5V, IC=10mA, f=100MHz
VCB=10V, f=1MHz, IE=0A
* Pulse Test: Pulse WidthЉ380 s, Duty CycleЉ2%
8FC
250 - 630
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