GSBC807 Datasheet, PDF (1/2 Pages) GTM CORPORATION – PNP EPITAXIAL PLANAR TRANSISTOR

ISSUED DATE :2005/06/08
REVISED DATE :
GSBC807
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The GSBC807 is designed for switching and AF amplifier application, suitable for driver storages and low power output storages.
Package Dimensions
REF.
A
A1
A2
D
E
HE
Millimeter
Min. Max.
0.80 1.10
0
0.10
0.80 1.00
1.80 2.20
1.15 1.35
1.80 2.40
REF.
L1
L
b
c
e
Q1
Millimeter
Min. Max.
0.42 REF.
0.15
0.35
0.25
0.40
0.10
0.25
0.65 REF.
0.15 BSC.
Absolute Maximum Ratings at Ta = 25к
Parameter
Symbol
Ratings
Unit
Junction Temperature
Tj
+150
ć
Storage Temperature
Tstg
-55 ~ +150
ć
Collector to Base Voltage
VCBO
-50
V
Collector to Emitter Voltage
VCEO
-45
V
Emitter to Base Voltage
VEBO
-5
V
Collector Current
IC
800
mA
Total Power Dissipation
PD
225
mW
Characteristics at
Symbol
BVCBO
BVCEO
BVCES
Min.
-50
-45
-50
BVEBO
-5
ICES
-
IEBO
-
*VCE(sat)
-
*VBE(on)
-
*hFE
100
fT
-
Cob
-
Ta = 25к
Typ.
-
-
-
-
-
-
-
-
-
100
-
Max.
-
-
-
-
-100
-100
-700
-1.2
630
-
12
Classification Of hFE
Rank
Range
9FA
100 - 250
9FB
160 - 400
Unit
V
V
V
V
nA
nA
mV
V
MHz
pF
Test Conditions
IC=-100uA
IC=-10mA
IC=-100uA
IE=-100uA
VCE=-25V
VEB=-4V
IC=-500mA, IB=-50mA
VCE=-1V, IC=-300mA
VCE=-1V, IC=-100mA
VCE=-5V, IC=-10mA, f=100MHz
VCB=-10V, f=1MHz, IE=0A
* Pulse Test: Pulse WidthЉ380 s, Duty CycleЉ2%
9FC
250 - 630
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