GSBAW56 Datasheet, PDF (1/2 Pages) GTM CORPORATION – SURFACE MOUNT, SWITCHING DIODE

CORPORATION ISSUED DATE :2005/12/23
REVISED DATE :
G S B AW 5 6
SURFACE MOUNT, SWITCHING DIODE
Description
The GSBAW56 consists of two high-speed switching diodes with common anodes, fabricated in planar
technology, and encapsulated in a small SOT-323 plastic SMD package.
Package Dimensions
3
REF.
A
A1
A2
D
E
HE
Millimeter
Min. Max.
0.80 1.10
0
0.10
0.80 1.00
1.80 2.20
1.15 1.35
1.80 2.40
1
REF.
L1
L
b
c
e
Q1
2
Millimeter
Min. Max.
0.42 REF.
0.15
0.35
0.25
0.40
0.10
0.25
0.65 REF.
0.15 BSC.
Absolute Maximum Ratings at TA = 25к
Parameter
Symbol
Ratings
Unit
Junction Temperature
Tj
+125
к
Storage Temperature
Tstg
-65 ~ +150
к
Repetitive Peak Reverse Voltage
VRRM
85
V
Continuous Reverse Voltage
VR
75
V
single diode loaded (note1)
150
Continuous Forward Current
IF
mA
double diode loaded (note1)
130
Repetitive Peak Forward Current
IFRM
500
mA
Non-Repetitive Peak Forward Current (1ms)
IFSM
1
A
Total Power Dissipation
PD
250
mW
Notes: 1. Device mounted on an FR4 printed-circuit board.
Electrical Characteristics (at TA = 25к unless otherwise noted)
Parameter
Symbol
Min.
Max.
Unit
Test Conditions
Reverse Voltage
VR
85
-
V
IR=100uA
VF(1)
-
715
mV
IF=1mA
Forward Voltage
VF(2)
-
855
mV
IF=10mA
VF(3)
-
1000
mV
IF=50mA
VF(4)
-
1250
mV
IF=150mA
Reverse Current
IR
-
1
uA
VR=80V
Diode Capacitance
CD
2
pF
VR=0, f=1MHz
Reverse Recovery Time
Trr
-
4
nS
IF=IR=10mA, RL=100 measured at IR=1mA
GSBAW56
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