GSA1625 Datasheet, PDF (1/2 Pages) GTM CORPORATION – PNP SILICON TRANSISTOR

ISSUED DATE :2004/12/16
REVISED DATE :
GSA1625
PNP SILICON TRANSISTOR
Description
The GSA1625 is designed for general purpose amplifier and high speed switching applications.
Features
Ô¦High Voltage
Ô¦High Speed Switching
Ô¦Low Collector Saturation Voltage
Package Dimensions
D
E
S1
TO-92
b1
S E A T IN G
PLANE
C
e1
b
e
REF.
A
S1
b
b1
C
Millimeter
Min. Max.
4.45
4.7
1.02
-
0.36
0.51
0.36
0.76
0.36
0.51
REF.
D
E
L
e1
e
Millimeter
Min.
Max.
4.44
4.7
3.30
3.81
12.70
-
1.150 1.390
2.42
2.66
Absolute Maximum Ratings at Ta = 25к
Parameter
Symbol
Junction Temperature
Storage Temperature
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Tj
Tstg
VCBO
VCEO
VEBO
IC
Collector Current(pulse)*
Total Power Dissipation
*pwЉ2ms, Duty CycleЉ50%
Characteristics at
IC
PD
Ta = 25к
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
Min.
-400
-400
-7
-
-
Typ.
-
-
-
-
-
Max.
-
-
-
-10
-10
*VCE(sat)
*VBE(sat)
*hFE
-
-
-0.5
-
-
-1.2
40
80
200
fT
20
40
-
Cob
-
17
20
Classification Of hFE
Rank
M
Range
40 - 80
L
60 - 120
Ratings
Unit
+150
ć
-55 ~ +150
ć
-400
V
-400
V
-7
V
-500
mA
-1000
mA
750
mW
Unit
V
V
V
A
A
V
V
MHz
pF
Test Conditions
IC=-100uA
IC=-1mA
IE=-100uA
VCB=-400V, IE=0
VEB=-5V, IC=0
IC=-100mA, IB=-10mA
IC=-100mA, IB=-10mA
VCE=-5V, IC=-50mA
VCE=-10V, IE=-10mA
VCB=-10V, IE=0, f=1MHz
K
100 -200
* Pulse Test: Pulse WidthЉ380 s, Duty CycleЉ2%
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